2001
DOI: 10.1063/1.1378332
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LiNbO 3 thick films grown on sapphire by using a multistep sputtering process

Abstract: Articles you may be interested inEpitaxial Sr 1.8 Ca 0.2 NaNb 5 O 15 thin film waveguides grown by pulsed laser deposition: Optical properties and microstructure

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Cited by 49 publications
(28 citation statements)
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“…[2][3][4][5] Although high quality thin epitaxial LN and LT films have been fabricated by different techniques, the growth of thick films, required for surface acoustic wave applications and guided-wave integrated optics, is far from routine. 6,7 Electrical and electrooptical properties reported so far are not comparable to those of LN and LT single-crystals. 8,9 Another complicating factor is the non-stoichiometry of Li, which also influences the physical and structural properties of LN-LT.…”
mentioning
confidence: 73%
“…[2][3][4][5] Although high quality thin epitaxial LN and LT films have been fabricated by different techniques, the growth of thick films, required for surface acoustic wave applications and guided-wave integrated optics, is far from routine. 6,7 Electrical and electrooptical properties reported so far are not comparable to those of LN and LT single-crystals. 8,9 Another complicating factor is the non-stoichiometry of Li, which also influences the physical and structural properties of LN-LT.…”
mentioning
confidence: 73%
“…In-line fiber optic modulators, domain engineered interfaces for controlled electro-optic deflections 1, integrated optical wave guide structures [2] , temperature stable surface acoustic wave (SAW) [3] and acousto-optic devices are some of the potential applications. Optical waveguiding [4] and surface acoustic wave propagation [5] (SAW) has been demonstrated on epitaxial LiNbO 3 films grown on sapphire and LiTaO 3 single crystal substrates. There is a growing interest to find matched substrate materials, buffer layers and electrode layers that promote the desired crystallization of LiNbO 3 .…”
Section: Introductionmentioning
confidence: 99%
“…The LN-film=Si structures are considered as promising for replacement LN thin plate single crystalline elements of functional optoelectronics, in particular for surface acoustic wave (SAW) devices, non-linear optics (wave-guides and frequency doublers), and telecommunication (optical switchers and filters) applications [1,2]. The structures of LN-film=Si are also attractive for integrated ferroelectric random access memories (FeRAM) [3].…”
Section: Introductionmentioning
confidence: 99%