Fast Humidity Sensing and Switching of LiNbO₃Films on Silicon

Abstract

The influence of a pulse humidity impact on the electrophysical parameters of Pt= LiNbO 3 -film=Pt:Ti=SiO 2 =Si structures is investigated. A continuous transformation of the current-voltage, charge-voltage, and transient characteristics with the reaction time $1 s and the recovery time $10 s (under a low humidity impact), as well as a transformation of the threshold switching type (under a high humidity impact), are observed. The peculiarities of current-voltage loops and transient currents correspond to the relay-race charge transfer.The efficiency of dynamic methods for studying the influence of fast humidity changes on the electrophysical characteristics of LiNbO 3 films is demonstrated, and the possible applications to high-speed humidity sensing are considered.

Ferroelectric-like behaviour of melanin: Humidity effect on current-voltage characteristics

“…Static humidity influence was studied by its effect on quasistatic current-voltage characteristics. Pulse humidity influence was studied by its impact on dynamic current-voltage characteristics as in our previous studies of porous and mesoporous systems [31][32][33][34][35][36][37]. Taking into consideration different levels of photosensitivity depending on various kinds of melanin, different surrounding conditions, material state and type of used sample structure (see e.g.…”

“…Earlier we reported [31][32][33][34][35][36][37] about the considerable and fast reaction on the humidity impact for a number of nonorganic porous systems, namely zeolite-like Na-Y and mesoporous MCM-41 systems [31], porous Si [33][34][35] complex metal-oxide ceramics [32,35] and LiNbO3-films [36,37]. These studies proved the efficiency for examining the changes of parameters of bipolar and unipolar dynamic current-voltage characteristics connected with the pulse change of humidity in dynamic operational mode.…”

Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

“…higher than that of I − m . At V da = 10 V, the voltages V m obtained from I-V-loop are V − m = −3.7 V and V + m = +6.7 V. The forming under V da = 10 V results in the change of V + m and V − m values and increase of I + m and I − m values under subsequent V da decrease (seeFigure 2(a)).Because the vertical (along I-axis) size of I-V-loop is proportional to the sample capacity C[6], the value of ΔI 0 = (I − 0 + I + 0 )/2 V da (where I − 0 and I + 0 are the currents at V d = 0) can be considered as a measure of the capacitive asymmetry ΔC 0 = (C − 0 − C + 0 ) of I-V-loop.Figure 2(b) presents V da dependences of capacitive asymmetry factor ΔC 0 ∝ ΔI 0 . Under V da increasing and its subsequent decreasing after forming the values of ΔC 0 are near the same at…”