Light trapping in ultrathin CuIn1-xGaxSe2 solar cells by dielectric nanoparticles

Yin, Guanchao; Manley, Phillip; Schmid, Martina

doi:10.1016/j.solener.2018.01.096

Cited by 22 publications

(36 citation statements)

References 41 publications

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“…Hence, the introduction of the SiO 2 layer changes the rear reflection but compared with the reference some light still exits the solar cell. Light trapping is then needed to take advantage of the rear increased optical reflection, in good agreement with other studies . From these simple measurements, it is hard to find a quantification on the increase of the J sc between the increase in the reflection and the passivation effect.…”

Section: Summary Of the Samples Produced In This Work As Well The Expsupporting

confidence: 68%

“…Nonetheless, we can gather the samples in two groups, the first group is where the samples both have an efficiency and a value of V oc * FF higher than the reference 1. These samples, H0.7Pitch2, H0.7Pitch4, and H1.4Pitch4, show the typical effects of rear passivation by showing a moderate improvement in V oc , a small improvement in J sc and similar values of FF as the reference devices . Hence, the hypothesis that SiO 2 could be used as a passivation material in CIGS is confirmed.…”

Section: Summary Of the Samples Produced In This Work As Well The Expmentioning

confidence: 53%

“…These samples, H0.7Pitch2, H0.7Pitch4, and H1.4Pitch4, show the typical effects of rear passivation by showing a moderate improvement in V oc , a small improvement in J sc and similar values of FF as the reference devices. [6,8,17,19] Hence, the hypothesis that SiO 2 could be used as a passivation material in CIGS is confirmed. The second group of samples with H0.7Pitch8 and H1.4Pitch8, are the ones where the pattern has a pitch of 8 mm between the SiO 2 openings.…”

Section: Reference No Passivation Layermentioning

confidence: 76%

“…In this work, we expand the study of using photolithography to create a patterned insulator layer with etched features with 700 and 1400 nm which allow to increase the total passivation area while keeping the distance between the contacts the same order of magnitude as the carrier's diffusion length. Furthermore, according to recent studies indicating that SiO 2 is a promising passivation material, we choose to work with that dielectric material …”

Section: Summary Of the Samples Produced In This Work As Well The Expmentioning

confidence: 99%

“…Furthermore, according to recent studies indicating that SiO 2 is a promising passivation material, we choose to work with that dielectric material. [16][17][18][19][20][21] In this work, we study rear passivation effects on ultrathin CIGS solar cells. This passivation is performed by applying a SiO 2 layer, in a trench configuration, on top of the rear-contact electrode (Mo).…”

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confidence: 99%

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Optical Lithography Patterning of SiO₂ Layers for Interface Passivation of Thin Film Solar Cells

et al. 2018

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Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO2 passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.

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Section: Summary Of the Samples Produced In This Work As Well The Expsupporting

confidence: 68%

Section: Summary Of the Samples Produced In This Work As Well The Expmentioning

confidence: 53%

Section: Reference No Passivation Layermentioning

confidence: 76%

Section: Summary Of the Samples Produced In This Work As Well The Expmentioning

confidence: 99%

mentioning

confidence: 99%

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Optical Lithography Patterning of SiO₂ Layers for Interface Passivation of Thin Film Solar Cells

et al. 2018

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Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se₂

Oliveira

Teixeira

Ramos

et al. 2022

Advanced Photonics Research

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Light management strategies are of utmost importance to allow Cu(In,Ga)Se2 (CIGS) technology market expansion, as it would enable a conversion efficiency boost as well as thinner absorber layers, increasing sustainability and reducing production costs. However, fabrication and architecture constraints hamper the direct transfer of light management architectures from other photovoltaic technologies. The demand for light management in thin and ultrathin CIGS cells is analyzed by a critical description of the optical loss mechanisms in these devices. Three main pathways to tackle the optical losses are identified: front light management architectures that assist for an omnidirectional low reflection; rear architectures that enable an enhanced optical path length; and unconventional spectral conversion strategies for full spectral harvesting. An outlook over the challenges and developments of light management architectures is performed, establishing a research roadmap for future works in light management for CIGS technology. Following the extensive review, it is expected that combining antireflection, light trapping, and conversion mechanisms, a 27% CIGS solar cell can be achieved.

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3‐D Modeling of Ultrathin Solar Cells with Nanostructured Dielectric Passivation: Case Study of Chalcogenide Solar Cells

Raja

Aydın

Allen

et al. 2021

Advcd Theory and Sims

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Ultrathin solar cells can be a path forward to low‐cost photovoltaics due to their reduced material consumption and shorter required deposition times. With excellent surface passivation, such devices may feature higher open‐circuit voltages (VOC). However, their short‐circuit current density (JSC) may be reduced due to decreased light absorption. This mandates implementation of efficient light‐trapping structures. To design efficient ultrathin solar cells that combine surface‐passivation and light‐trapping features, accurate 3‐D modeling is necessary. To this end, a novel 3‐D optoelectrical finite‐element model is developed to analyze the performance of ultrathin solar cells. The model is applied to the case of ultrathin (<500 nm) chalcogenide solar cells (copper indium gallium (di) selenide, CIGSe), rear‐passivated with nanostructured Al2O3 to circumvent optical and electrical losses. It is found that such a nanopatterned dielectric passivation scheme enhances broadband light‐trapping with reduced rear‐surface recombination, resulting in an absolute power conversion efficiency enhancement of 3.9%, compared to cells without passivation structure. Overall, the work shows how 3‐D finite element modeling can aid in analyzing and developing new optical and electrical solar cell designs for ultrathin solar cells such as those based on chalcogenides and perovskites.

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Light trapping in ultrathin CuIn1-xGaxSe2 solar cells by dielectric nanoparticles

Cited by 22 publications

References 41 publications

Optical Lithography Patterning of SiO₂ Layers for Interface Passivation of Thin Film Solar Cells

Optical Lithography Patterning of SiO₂ Layers for Interface Passivation of Thin Film Solar Cells

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se₂

3‐D Modeling of Ultrathin Solar Cells with Nanostructured Dielectric Passivation: Case Study of Chalcogenide Solar Cells

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Light trapping in ultrathin CuIn1-xGaxSe2 solar cells by dielectric nanoparticles

Cited by 22 publications

References 41 publications

Optical Lithography Patterning of SiO2 Layers for Interface Passivation of Thin Film Solar Cells

Optical Lithography Patterning of SiO2 Layers for Interface Passivation of Thin Film Solar Cells

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se2

3‐D Modeling of Ultrathin Solar Cells with Nanostructured Dielectric Passivation: Case Study of Chalcogenide Solar Cells

Contact Info

Product

Resources

About

Optical Lithography Patterning of SiO₂ Layers for Interface Passivation of Thin Film Solar Cells

Optical Lithography Patterning of SiO₂ Layers for Interface Passivation of Thin Film Solar Cells

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se₂