“…IPE occurs in MJs with no AlOx present and provides a measure of the offsets between contact Fermi levels and molecular orbitals. , Photon absorption occurring in the molecular layer generates holes and electrons which can then dissociate to generate photocurrent (PC) at zero bias (mode #2), or an increase in photoconductance under bias. ,, Reported examples show that the PC spectrum is similar to the absorption spectrum of the molecule inside the junction, and that PC transport is nearly activationless below T = 150 K. , Light emission by MJs has been reported for two distinct mechanisms, with the first involving hot electrons in the positive electrode coupling to plasmons and generating light (mode #3). ,,− Hot electrons resulting from bias-induced tunneling across thin inorganic films then undergoing photoemission have been reported, , and photoemission accompanying scanning tunneling microscope (STM) experiments has also been reported. − A second mechanism for emission from few-nanometer thick MJs involves electron and hole injection at opposite electrodes followed by recombination to produce light, , analogous to light emitting diodes but with fewer and much thinner molecular layers and likely distinct transport modes. Finally, optical absorption by molecular bilayers with total thickness of ∼10 nm has been reported, with the PC tracking the molecular absorption spectrum and the polarity depending on relative orbital energies. , As will be discussed below, optical generation of carriers within the molecular layer (mode #2 in Figure C) is the most suitable mechanism for practical photodetection, and is the basis of all experiments illustrated in the remaining figures.…”