Light-ion-bombarded p-type In0.53Ga0.47As

Abstract

Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≊103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≊200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

“…For implants with O ϩ , C ϩ , and Li ϩ ions, there is a sharp rise in R s to its maximum at the critical dose D Cr with a relatively steep drop-off for higher doses. Rao et al 18 also found a very close compensation when implanting H, He, and B ions into p-InGaAs, although their maximum values of R s were one or two orders of magnitude lower than what we have achieved here. Moreover, Rao et al showed that for implants with these three ions, a kind of parallel decrease in R s occurred beyond the critical dose, which can also be seen for implants with O ϩ , C ϩ , and Li ϩ in Fig.…”

“…A similar series of experiments was performed for 0.5-m n-InGaAs epilayers with carrier concentrations of 5ϫ10 16 , 2.7ϫ10 17 , and 1.2ϫ10 18 cm Ϫ3 . Figure 4 shows the corresponding results for implantation with C ϩ , O ϩ , Li ϩ , and H ϩ into samples with nϭ2.7ϫ10 17 cm Ϫ3 .…”

“…This n i corresponds to a resistivity of 10 3 ⍀ cm. 18 Steeples et al, among others, 19 have reported resistivities greater than 10 4 ⍀ cm in In 0.53 Ga 0.47 As due to multiple proton or deuteron bombardments, but otherwise, efforts to isolate InGaAs using multiple ion bombardments have resulted in resistivities that do not exceed the value of the Fe-doped material.…”

Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector

“…Ion implantation induced defects are often used as a beneficial processing step to control the lifetime and resistivity of ultrafast III-V optoelectronic switches 12,13 and materials. Although p to n-type conversion has been noted for ion implantation isolation studies in p-InGaAs, 22 the reverse has not been unambiguously observed although the Gill data certainly hints at it taking place. 15 Exactly how damage influences the high-speed performance of an InGaAs-InP detector will become an increasingly important issue, especially as links move to even higher speeds where constraints on bulk properties are tight.…”

Damage Related Defect Levels in Oxygen Implanted GaAs and InP

“…Ion implantation has mostly been used to selectively create doped regions in the semiconductors such as the channel regions of FETs and the n + regions for source and drain contacts to FETs. Oxygen ion implantation in GaAs and InP for a generating semi-insulating layer has been studied for years [3][4][5][6]. The latter application is now gaining more attention.…”