Light intensity effects on the sensitivity of ZnO: Cr gas sensor

Manivasaham, A.; Ravichandran, K.; Subha, K.

doi:10.1080/02670844.2017.1331724

Cited by 21 publications

(11 citation statements)

References 40 publications

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“…Therefore, at 12-20 sccm, the layers created more free carriers, hence the low transmission. To estimate the optical absorption coefficient (α), we have used the relationship of transmittance as [23] a = 1 d ln(T) (5) with d being the film thickness. In addition, the UV transmittance (T ) is directly linked to the optical band gap.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…ZnO is a well-transparent conductive oxide, which has a wide energy band gap of 3.37 eV, good electrical conductivity of 10 3 Ω −1 cm −1 , abundance, and environmentally friendly [1][2][3]. Because of its advantages, zinc oxide can be used in several applications like solar cells, optical and gas sensors, ultrasonic oscillators, transductors, transparent conductors and photoprotective coatings [4][5][6][7][8]. These applications depend on ZnO properties that are influenced by different factors like deposition conditions, chemical composition, ZnO structural, defects and preferential orientation.…”

Section: Introductionmentioning

confidence: 99%

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Oxygen effect on structural and optical properties of zinc oxide

Radjehi

Djelloul

Lamri

et al. 2019

Surface Engineering

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This article deals with an investigation of the effect of oxygen content on optical and structural properties of ZnO films. Zinc oxide films were deposited with the DC reactive magnetron sputtering process on Si(100) and glass substrates. ZnO films were elaborated at different oxygen flow rates from (O 2 ) 12 to 35 sccm. The evolution of optical and structural properties as a function of O 2 was investigated by X-ray diffraction, Profilometer, Field Emission Scanning Electron Microscopy (FESEM) and ultraviolet-visible. By increasing O 2 , the crystallite size increases from 20 to 27 nm, which leads to an enlargement in the ZnO band gap from 3.18 to 3.30 eV. At 30 sccm of O 2 , the films present a significant improvement in the band gap (3.30 eV). The results reveal that with increasing O 2 , all films show a high crystallinity in the wurtzite phase and present a (002)ZnO preferential orientation along the c-axis. ZnO exhibited a good self-texture.

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Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Oxygen effect on structural and optical properties of zinc oxide

Radjehi

Djelloul

Lamri

et al. 2019

Surface Engineering

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“…Fig. 10(c) shows the reduction in the states' size in the Cr 2p 3/2 and Cr 2p1/2 clearly shows the film's oxygen deficiency and confirms the substitution of some Cr 2+ for Zn 2+ sites [150]. FIGURE 10.…”

Section: Figurementioning

confidence: 65%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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“…Plenty of metal oxide semiconductors like V2O5, SnO2, TiO2, NiO, BaTiO3 and ZnO are widely used to detect ammonia vapours [4][5][6][7][8][9][10]. Of these, ZnO is one of the promising materials due to its attracting properties which include high thermal and chemical stability, non-toxicity, wide band gap, availability, environmentally benign nature, low-cost and ease of doping [11].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Ammonia Sensing By Cost-Effective ZnO Thin Films Through Yttrium Doping

Ravichandran¹,

Aj²,

et al. 2021

Preprint

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Yttrium (Y) doped (doping concentration - 0, 1, 3 and 5 wt%) ZnO thin films were deposited using spray pyrolysis technique. The structural, surface morphological, optical and compositional properties were analysed using X-Ray diffraction (XRD), Atomic Force Microscopy (AFM), UV-vis NIR spectrophotmetry (UV), photoluminescence study (PL) and elemental composition analysis. Ammonia vapour sensing properties such as response/recovery, stability and repeatability were studied at room temperature. XRD results confirmed that the prepared samples have hexagonal wurtzite structure. ZnO:Y thin film with 5 wt% yttrium doping exhibits excellent sensing response of 99, fast response/recovery times of 29 s/ 7 s which may be due to the existence of oxygen vacancies in the case of ZnO:Y (5 wt%) film sample confirmed by photoluminescence (PL) study. These oxygen vacancies attract more electrons and thus enhance the gas sensing. In addition, increase in the number of active sites caused by the substitution of Y3+(trivalent) ions into the Zn2+ (divalent) regular sites as confirmed by the observed M-B (Moss-Burstein) effect also causes an enhancement in the gas sensing. Surface roughness, another reason for the enhanced sensitivity, has been confirmed by AFM.

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Light intensity effects on the sensitivity of ZnO: Cr gas sensor

Cited by 21 publications

References 40 publications

Oxygen effect on structural and optical properties of zinc oxide

Oxygen effect on structural and optical properties of zinc oxide

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Enhanced Ammonia Sensing By Cost-Effective ZnO Thin Films Through Yttrium Doping

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