2015
DOI: 10.1016/j.optcom.2014.08.033
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Light-induced switching of a chalcogenide-coated side-polished fiber device

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Cited by 11 publications
(4 citation statements)
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“…We thus anticipate that these systems will be able to modulate vis–NIR light at high speeds with a minute consumption of power, typical of capacitive devices. This is an advantage with respect to alternative commutation devices based on quantum wells and phase-change materials . For example, we envision an integrated commutation device operating over an area A = 50 × 50 μm 2 (i.e., covering a customary optical beam size), for which we estimate a capacitance C = Aϵ/4π d ≈ 0.3 pF, where we consider ϵ = 4 (dc silica) and a gate separation d = 300 nm (notice that there is great flexibility in the choice of d in some of our devices).…”
Section: Discussionmentioning
confidence: 99%
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“…We thus anticipate that these systems will be able to modulate vis–NIR light at high speeds with a minute consumption of power, typical of capacitive devices. This is an advantage with respect to alternative commutation devices based on quantum wells and phase-change materials . For example, we envision an integrated commutation device operating over an area A = 50 × 50 μm 2 (i.e., covering a customary optical beam size), for which we estimate a capacitance C = Aϵ/4π d ≈ 0.3 pF, where we consider ϵ = 4 (dc silica) and a gate separation d = 300 nm (notice that there is great flexibility in the choice of d in some of our devices).…”
Section: Discussionmentioning
confidence: 99%
“…This is an advantage with respect to alternative commutation devices based on quantum wells 47 and phase-change materials. 48 For example, we envision an integrated commutation device operating over an area A = 50 × 50 μm 2 (i.e., covering a customary optical beam size), for which we estimate a capacitance C = Aϵ/4πd ≈ 0.3 pF, where we consider ϵ = 4 (dc silica) and a gate separation d = 300 nm (notice that there is great flexibility in the choice of d in some of our devices). The time response is then limited by the sheet resistance of the graphene layer (∼100 Ω/□), giving an overall cutoff frequency for the electrical bandwidth of 1/2πRC ≈ 5 GHz, while the optical limit for the electrical modulation of the photonic response (i.e., the effect related to the decay time of the resonance) renders a larger cutoff (c/2LQ ≈ 150 GHz for a cavity length L ≈ 1 μm and a quality factor Q ≈ 10 3 ).…”
Section: ■ Conclusion and Outlookmentioning
confidence: 99%
“…Although the exact mechanism of photostriction observed in GeS is not implicit, an interplay between transient photodarkening (red shift of the optical absorption edge by illumination) and photoinduced volume expansion has been suggested to cause the photostriction effect. [6,17,[23][24][25][26] The photodarkening phenomenon mainly occurs in GeS film due to increase in the number of wrong bonds such as S-S [434 nm peak in Raman spectra shown in Figure 2(d)]. [2,4] And the characteristic behavior (i.e., τ rise > τ fall ) observed in GeS could be correlated with the temporal influence of the ambient oxygen pressure on the surface of the coated GeS film during illumination.…”
Section: Resultsmentioning
confidence: 99%
“…This is an advantage with respect to alternative commutation devices based on quantum-wells [119] and phase-change materials. [120] The large electro-optical response of graphene combined with its small volume is thus ideal attributes for the design of fast optical modulators and switches operating in the vis-NIR, which can benefit from the coupling to optical resonators such as those explored in this chapter. These findings open a new avenue for the development of compact electro-optical components such as tunable light filters, switches, and sensors in the vis-NIR spectral region, that are appealing for micro integration and mass production.…”
Section: Discussionmentioning
confidence: 99%