Light Induced Nanowire Assembly: The Electrostatic Alignment of Semiconductor Nanowires into Functional Macroscopic Yarns

Petchsang, Nattasamon; McDonald, Matthew P.; Sinks, Louise E.; Kuno, Masaru

doi:10.1002/adma.201202722

Cited by 16 publications

(35 citation statements)

References 32 publications

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“…Resulting diameters were on the order of *10-40 nm with lengths on the micrometer scale. Finally, Petchsang et al demonstrated the growth of ZnSe NWs using Zn(stearate) 2 , TOPSe and BiCl 3 in tri-n-octylphosphine oxide (TOPO) [37]. The mean NW diameter was *22 nm with lengths on the order of 10 μm.…”

Section: Synthesis Of Group Ii-vi Nwsmentioning

confidence: 96%

“…This was followed by the work of Dong et al who produced ZnSe x Te 1−x NWs using Bi NPs in the presence of Zn(stearate) 2 and trioctylphosphine selenide (TOPSe)/TBPTe [35]. Resulting diameters were on the order of 10 nm with accompanying lengths of *1 μm.…”

Section: Synthesis Of Group Ii-vi Nwsmentioning

confidence: 97%

“…Analogously, using more reactive metal/chalcogen precursors results in narrower diameter NWs. As an example, in the growth of ZnTe NWs, narrower wires were obtained when ZnEt 2 was used as a precursor over less reactive Zn(stearate) 2 [30]. The spectra show that CdSe's band edge absorption and PL energies blueshift in tandem with decreasing NW diameter.…”

Section: Nw Diameter Controlmentioning

confidence: 97%

“…Once complete, the temperature of the reaction mixture is raised to 320°C under nitrogen. During this heating process, CdO reacts with octanoic acid to produce Cd(octanoate) 2 . A color change of the solution from red to clear occurs highlighting this.…”

Section: Synthesis Of Cdse Nwsmentioning

confidence: 99%

“…These features make them desirable for use in various applications. As illustrations, II-VI NWs have been used in photodetectors [1][2][3][4], solar cells [5][6][7][8][9] and in photocatalytic applications [10,11]. Likewise, IV-VI NWs, especially the lead chalcogenides, have been used in infrared photodetectors [12], thermoelectric devices [13,14] and in field effect transistors (FETs) [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Application of Solution-Based II–VI and IV–VI Semiconductor Nanowires

Tongying

Zhukovskyi

Kuno

2015

Anisotropic Nanomaterials

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Semiconductor nanowires (NWs) possess unique optical and electrical properties due to their anisotropic shape as well as their size-tunable electronic structure. In this chapter, we discuss the solution phase synthesis of II-VI and IV-VI semiconductor nanowires (e.g. ZnSe, CdS, CdSe, CdTe, PbS, PbSe, and PbSe x S 1−x ) as well as NW-based heterostructures involving core/shell and metal nanoparticle-decorated morphologies. We subsequently discuss the application of these materials within the context of nanowire yarns, nanowire-functionalized cotton textiles, and renewable energy applications involving nanostructured solar cells and photocatalytic hydrogen generation.

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Section: Synthesis Of Group Ii-vi Nwsmentioning

confidence: 96%

Section: Synthesis Of Group Ii-vi Nwsmentioning

confidence: 97%

Section: Nw Diameter Controlmentioning

confidence: 97%

Section: Synthesis Of Cdse Nwsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis and Application of Solution-Based II–VI and IV–VI Semiconductor Nanowires

Tongying

Zhukovskyi

Kuno

2015

Anisotropic Nanomaterials

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Nanowire Assemblies for Flexible Electronic Devices: Recent Advances and Perspectives

et al. 2018

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The fabrication of nanowire (NW)‐based flexible electronics including wearable energy storage devices, flexible displays, electrical sensors, and health monitors has received great attention both in fundamental research and market requirements in our daily lives. Other than a disordered state after synthesis, NWs with designed and hierarchical structures would not only optimize the intrinsic performance, but also create new physical and chemical properties, and integration of individual NWs into well‐defined structures over large areas is one of the most promising strategies to optimize the performance of NW‐based flexible electronics. Here, the recent developments and achievements made in the field of flexible electronics composed of integrated NW structures are presented. The different assembly strategies for the construction of 1D, 2D, and 3D NW assemblies, especially the NW coassembly process for 2D NW assemblies, are comprehensively discussed. The improvements of different NW assemblies on flexible electronics structure and performance are described in detail to elucidate the advantages of well‐defined NW assemblies. Finally, a short summary and outlook for future challenges and perspectives in this field are presented.

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Understanding the Mechanical and Conductive Properties of Carbon Nanotube Fibers for Smart Electronics

et al. 2019

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The development of fiber‐based smart electronics has provoked increasing demand for high‐performance and multifunctional fiber materials. Carbon nanotube (CNT) fibers, the 1D macroassembly of CNTs, have extensively been utilized to construct wearable electronics due to their unique integration of high porosity/surface area, desirable mechanical/physical properties, and extraordinary structural flexibility, as well as their novel corrosion/oxidation resistivity. To take full advantage of CNT fibers, it is essential to understand their mechanical and conductive properties. Herein, the recent progress regarding the intrinsic structure–property relationship of CNT fibers, as well as the strategies of enhancing their mechanical and conductive properties are briefly summarized, providing helpful guidance for scouting ideally structured CNT fibers for specific flexible electronic applications.

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Light Induced Nanowire Assembly: The Electrostatic Alignment of Semiconductor Nanowires into Functional Macroscopic Yarns

Cited by 16 publications

References 32 publications

Synthesis and Application of Solution-Based II–VI and IV–VI Semiconductor Nanowires

Synthesis and Application of Solution-Based II–VI and IV–VI Semiconductor Nanowires

Nanowire Assemblies for Flexible Electronic Devices: Recent Advances and Perspectives

Understanding the Mechanical and Conductive Properties of Carbon Nanotube Fibers for Smart Electronics

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