Light-induced lifetime degradation of commercial multicrystalline silicon wafers

Dhamrin, M.; Akihide, Takamoto; Hashigami, H.; Saitoh, Tadashi

doi:10.1109/pvsc.2002.1190542

Cited by 2 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 The effect of the BO defect is less important in multicrystalline wafers, because these have a lower undegraded lifetime to start with (due to other defects) and the oxygen concentration is generally lower. [3][4][5] In this paper we present another explanation for the discrepancy between modelled and empirical optimal base resistivity. This explanation is inherent in the relation between base resistivity and carrier recombination through impurities in the Shockley-Read-Hall (SRH) model, and is relevant for several common transition metal impurities.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Base doping and recombination activity of impurities in crystalline silicon solar cells

Geerligs

Macdonald

2004

Progress in Photovoltaics

View full text Add to dashboard Cite

The optimisation of base doping for industrial crystalline silicon solar cells is examined with model calculations. Focus is on the relation between base doping and carrier recombination through the important impurities interstitial iron (Fe i ) and the metastable boron-oxygen (BO) complex. In p-type silicon, the optimum base resistivity is strongly dependent on defect concentration. In n-type silicon, recombination due to Fe i is much lower and nearly independent of resistivity. Fe i is likely representative for other transition metal impurities. In many real cells a balance between Fe i or similar defects, and BO will occur.

show abstract

mentioning

confidence: 99%

“…The BO defect in multicrystalline silicon has been studied in several papers. [3][4][5] Because absolute capture cross-sections of this defect are not known, the relation between defect density and degradation of lifetime (from i to f ) is expressed through a 'normalized defect density' N t * :…”

mentioning

confidence: 99%

Base doping and recombination activity of impurities in crystalline silicon solar cells

Geerligs

Macdonald

2004

Progress in Photovoltaics

View full text Add to dashboard Cite

show abstract

“…Thus, the carrier recombination rate increases inside the substrate as the annealing temperature increases. This increase in the recombination rate is probably ascribed to an increase in the number of activated recombination centers induced by configuration of dopant-oxygen complexes 28,29) and by displacement of heavy metals to electrical active sites during the thermal annealing process. [30][31][32] 3.2 Examination of low-temperature cleaning process for the emitter layer growth From the dependence of the bulk lifetime on the thermal annealing temperature described in Sect.…”

Section: Dependence Of P-si Bulk Lifetime On Thermal Annealing Temper...mentioning

confidence: 99%

Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

Fujimura¹,

Someya²,

Yoshiba³

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We applied an epitaxial n + -type Si emitter layer grown on a p-type Si substrate by our environmentally-light-load sputter epitaxy method using RF magnetron sputtering without dopant activation annealing for a Si solar cell. We also applied low-temperature cleaning of the substrate with a hydrogen-fluoride treatment at room temperature prior to the emitter layer growth instead of the conventionally used high-temperature thermal cleaning under vacuum condition. In addition, by our sputter epitaxy method, we determined the optimum temperature for the emitter growth. An emitter layer with good crystallinity is obtained, and the solar cell, formed with an emitter layer grown at the optimum growth temperature of 410 °C, exhibits an energy conversion efficiency of 12.3% in 100% aperture ratio equivalent without a texture or an antireflection coat. By the above lowtemperature processes, a solar cell can be fabricated with process temperatures below 410 °C, which exhibits low temperature processes.

show abstract

Light-induced lifetime degradation of commercial multicrystalline silicon wafers

Cited by 2 publications

References 5 publications

Base doping and recombination activity of impurities in crystalline silicon solar cells

Base doping and recombination activity of impurities in crystalline silicon solar cells

Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

Contact Info

Product

Resources

About