Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

Fujimura, Sohei; Someya, Takahiro; Yoshiba, Shuhei; Tsukamoto, Takahiro; Kamisako, K.; Suda, Yoshiyuki

doi:10.7567/jjap.54.08kd01

Cited by 8 publications

(4 citation statements)

References 38 publications

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“…Graphene sheets were prepared on an SiO 2 /Si substrate, and then Ge was deposited on it by sputtering. Sputtering is widely used for forming metal, semiconductor, and oxide layers, and epitaxial growth of high-quality semiconductors is possible by appropriately selecting the growth conditions. − The graphene sheets did not entirely cover the substrate surface in this study; SiO 2 and the graphene surface were coexistent.…”

Section: Introductionmentioning

confidence: 87%

Direct Growth of Patterned Ge on Insulators Using Graphene

et al. 2021

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Graphene sheets were formed on a Si substrate with a 300-nm-thick SiO2 layer. The graphene sheets partially covered the SiO2 surface. Ge was deposited on the surface by sputtering. The fabricated samples were evaluated with Raman spectroscopy and atomic force microscopy. We found that Ge was formed on the graphene surface selectively when the substrate temperature was 450 °C or higher during the deposition. The results of the Raman spectroscopy indicated that sp3 defects were introduced into the graphene sheets after the deposition. Such defects can be an important factor in the selective adsorption of Ge on graphene sheets because sp3 defects are highly reactive. A growth temperature of more than 450 °C was needed for the selective deposition, indicating that the surface diffusion of the Ge adatoms on the insulating surface during the deposition is also important. The selective deposition of Ge on the graphene sheets is considered to be due to the sp3 defects introduced into the graphene sheets and surface diffusion of the Ge adatoms on the SiO2 surface. This direct-patterning technique on insulators can be utilized for various materials that can be deposited by sputtering.

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Section: Introductionmentioning

confidence: 87%

Direct Growth of Patterned Ge on Insulators Using Graphene

et al. 2021

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“…These advantages include the low temperature deposition, high efficiency in the use of raw materials, scalability to large dimensions, and higher environmental compatibility due to the absence of chemical, toxic, and explosive materials within the sputtering process. Additionally, the working conditions and process control are easier, and the required equipment is cheaper and simpler due to the use of solidstate materials for film deposition (such as silicon and metal targets) (Fujimura et al, 2015).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of N-Type Nanocrystalline Silicon Thin-Film by Magnetron Sputtering and Antimony Induced Crystallization

Shekoofa¹,

Wang²,

Li³

2023

AAES

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The fabrication of n-type nanocrystalline silicon thin films using magnetron sputtering and crystallization by adding antimony and thermal treatment is presented in this article. Firstly, a short overview about thin film deposition methods, along with the advantages and disadvantages of the magnetron sputtering, is provided. Then, the technique of adding metals for recrystallization of amorphous silicon is described, and the necessity of using antimony for obtaining n-type nanocrystalline silicon along with its characteristics is discussed. Next, the process of thin film deposition using magnetron sputtering and the production of n-type nanocrystalline silicon on a quartz substrate, by antimony induced crystallization, is explained. Subsequently, the characterization process and necessary measurements to confirm the crystallization of the nanocrystalline silicon layer and determine its crystalline properties are presented. For ease of electrical characterization, a simple n/p junction Schottky solar cell is fabricated using the produced nanocrystalline silicon layer on a p-type monocrystalline silicon wafer. In addition to nanocrystalline properties, the optical and electrical characteristics of this cell are also investigated. The measurements show that with the proposed method, a fine grains nanocrystalline silicon layer with an average grain size of 20 nm was formed in the <111> direction. J-V characteristic measurement shows the creation of a solar cell with conversion efficiency of 1.39%, open circuit voltage of 265mV and current density of 16.32mA/cm2. These results confirm that antimony can be used in the process of crystallizing amorphous thin film silicon obtained from magnetron sputtering and converting it into n-type nanocrystalline silicon.

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“…The motivation for preparing silicon on Ag films using VHF magnetron sputtering comes from the following facts. First, magnetron sputtering is an important technology for film deposition [13][14][15][16], and for the epitaxial growth of Si films [17][18][19][20]. Second, VHF magnetron sputtering discharge can produce ions with higher energy and very low flux [21][22][23], and thus the quantity of sputtered Si and the growth of silicon can be controlled well.…”

Section: Introductionmentioning

confidence: 99%

Growth and structural properties of silicon on Ag films prepared by 40.68 MHz very-high-frequency magnetron sputtering

Guo¹,

Ye²,

Wang³

et al. 2017

Plasma Sci. Technol.

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The growth of silicon on Ag films via 40.68 MHz very-high-frequency (VHF) magnetron sputtering was investigated. The energy distribution and flux density of the ions on the substrate were also measured. The results showed that 40.68 MHz magnetron sputtering can produce ions with higher energy and lower flux density. The impact of these ions onto the grown surface promotes the growth of silicon, which is related to the crystalline nature and microstructure of the underlayer of the Ag films, and there is large particle growth of silicon on Ag films with a preferred orientation of (111), and two-dimensional growth of silicon on Ag films with a better face-centered cubic structure.

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Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

Cited by 8 publications

References 38 publications

Direct Growth of Patterned Ge on Insulators Using Graphene

Direct Growth of Patterned Ge on Insulators Using Graphene

Fabrication of N-Type Nanocrystalline Silicon Thin-Film by Magnetron Sputtering and Antimony Induced Crystallization

Growth and structural properties of silicon on Ag films prepared by 40.68 MHz very-high-frequency magnetron sputtering

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