2011
DOI: 10.1016/j.optlastec.2011.01.004
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Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM

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Cited by 15 publications
(10 citation statements)
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“…Similar results were shown for GaAs-based structures, where the L(I) measurements demonstrated an enhancement of light extraction efficiency between the emitted light of the PhC and non-PhC LED app. 1.39 times [10]. For the same structure, the effect of 2D structure on the light extraction efficiency was documented from analysis in the near field of the PhC LED, where the analysis revealed 15% enhancement of the emission from the air hole regions in comparison with the surrounding surface.…”
Section: Resultsmentioning
confidence: 94%
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“…Similar results were shown for GaAs-based structures, where the L(I) measurements demonstrated an enhancement of light extraction efficiency between the emitted light of the PhC and non-PhC LED app. 1.39 times [10]. For the same structure, the effect of 2D structure on the light extraction efficiency was documented from analysis in the near field of the PhC LED, where the analysis revealed 15% enhancement of the emission from the air hole regions in comparison with the surrounding surface.…”
Section: Resultsmentioning
confidence: 94%
“…On the other hand, PhC structures have also been investigated as a potential candidate for improving the extraction efficiency of LEDs [7][8][9][10]. While geometric factors of the 2D PhC structure -such as lattice shape, air hole size, and dielectric constants of used materials -play a role in determining the directionality and the far-field profile; for the light extraction efficiency the etch depth is important [11].…”
Section: Introductionmentioning
confidence: 99%
“…One-dimensional optical field was formed by the interference of two coherent beams of Ar ion laser (488 nm) with the intensity 60 mW/cm 2 . The adequate exposure time for this experiment was optimized to 100-120 s [10]. 2D square pattern in the 250 nm thin photoresist layer was achieved using the double exposure process [8,10].…”
Section: Methodsmentioning
confidence: 99%
“…The adequate exposure time for this experiment was optimized to 100-120 s [10]. 2D square pattern in the 250 nm thin photoresist layer was achieved using the double exposure process [8,10]. The patterned photoresist masks were used for formation of 2D PhC structures in the LED surface using reactive ion etching (RIE).…”
Section: Methodsmentioning
confidence: 99%
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