Light emitting properties of Si⁺ self-ion implanted silicon-on-insulator from visible to infrared band

Abstract

The photoluminescence (PL) properties of silicon-on-insulator (SOI) samples, modified by the Si self-ion-implantation (SII) into Si thin film followed by annealing, have been well investigated. The well-known W-line can also be observed in SII SOI samples, its emitting behavior and structural evolution have been discussed in this article. The parallel PL pattern trend and the similar changes of temperature-dependent intensity suggest that luminescence center of I and I peaks located in the near-infrared band originates from the same interstitial-clusters (ICs). The PL peak at 1.762 eV can be ascribed to the quantum confinement (QC) from small-sized Si nanocrystals. Based on the electron spin resonance (ESR) experiments and the variation of normalized PL intensities at different annealing temperature (T), the neutral oxygen vacancy (NOV) [O≡Si-Si≡O] is proposed to be responsible for the blue emission of P and P peaks, whose intensity can be restrained by the existence of the paramagnetic E' defects [O≡Si]. The density of E' defect is found to reduce with the increase of annealing temperature (T). Our results provide a useful method to identify the origin of luminescence centers and pave a way for the application of new type optical defects on silicon based light emitting devices (LEDs).

Optical properties of D and S defects induced by Si+/Ni+ ions co-implanting into Si films on insulator

“…A variety of ions [15,16], such as P, H, He, B, Cu and Fe, and even rare-earth elements, such as Tb and Er ions [17,18], were implanted into the silicon crystal to modulate the optical properties of silicon and thereby improve its optical efficiency. Si + selfion-implantation, a method dominated by interstitials and a small number of vacancy defects, has attracted a wide attention for its introduction of the 'pure defects' into Si matrix [19,20]. The defect energy levels distributed in the forbidden gap of silicon create new optical transition platforms within the momentum conservation frame and facilitate radiative recombination of electron-hole pairs.…”

Light-Emission from Ion-Implanted Group-IV Nanostructures

“…Concerning optical emission from Si, the implantation of ions, such as H, etc into crystalline bulk Si or other bulk group-IV layers was studied quite extensively within the last decades and led to the observation of interesting implantation-related light emission phenomena from these structures [35,36,[177][178][179][180]. Further research was devoted to nanostructure formation driven by ion implantation [181][182][183][184].…”