Defect Engineering for Enhanced Silicon Radiofrequency Substrates
Martin Perrosé,
Yoann Baron,
Baptiste Lefaucher
et al.
Abstract:Herein, high‐resistivity silicon substrates with specific He+ ion implantations to mitigate the parasitic surface conduction effect are studied. Several postimplantation thermal annealing conditions are investigated. Substrate performance is assessed at radiofrequencies (RFs) using the small‐signal characterization of coplanar waveguides (CPW) structures. The best effective resistivity (ρeff) of 4 kΩ cm is achieved with the wafer annealed at 600 °C for 2 h. This ρeff value is also stable as a function of DC bi… Show more
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