Light-controlled Anodic oxidation of n-GaAs and its application to preparation of specified active layers for MESFET's

Shimano, Akio; Takagi, Hiromitsu; Kano, G.

doi:10.1109/t-ed.1979.19673

Cited by 8 publications

(2 citation statements)

References 14 publications

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“…There have been a number of reports of electrochemical etching of GaAs where the etching process was assisted by the production of photogenerated minority carriers [2][3][4][5][6][7][8][9].…”

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confidence: 99%

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Laser-Controlled Etching Of Chromium-Doped and N-Doped <100> Gaas

Tisone

Johnson²

1982

MRS Proc.

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The photochemical etching of chromium-doped and n-doped <100> GaAs in HNO 3 and KOH is examined in the wavelength region of 334 to 514 nm from an argon-ion laser.The etching process is found to be not thermally controlled.The etch rates of chromium-doped GaAs agree with a diffusion-controlled model of the photochemically produced holes.For both types of GaAs, HNO 3 is found to produce morphologically superior results.

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“…Photogenerated holes have been used to assist in the electrochemical etching of n-type III-V compounds by oxidative decomposition [2][3][4]7,8]. The decomposition of GaAs by oxidation is thought [9] to be due to the surface reaction GaAs + 6h+ + Ga(3+) + As(3+).…”

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confidence: 99%

Laser-Controlled Etching Of Chromium-Doped and N-Doped <100> Gaas

Tisone

Johnson²

1982

MRS Proc.

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A New Process for Optical Data Recording by Photoelectrochemical Etching

Ryan

Lévy‐Clément

Mahalu

et al. 1990

Ber Bunsenges Phys Chem

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Photoetching of holographic gratings was performed on materials belonging to two families of compounds, exhibiting bidimensional and tridimensional structures. Fringes of poor quality only could be obtained on the Van der Waals face of quasi‐two dimensional (layered) semiconductors due to their high resistance to photocorrosion (WSe2), or large diffusion length of minority carriers along this face (InSe), while good morphological and optical contrasts were obtained on the surface of II — VI semiconductors. — Using a laser scanning setup, the photoresponse of Schottky diodes which were made from these semiconductors was used to convert optical information into electrical signal. The photoetched part exhibits an improved photoresponse, which produces electrical contrast between the two parts. This observation is used to transform optical information into an electrical signal. The diffusion length of minority carriers was determined from this photocurrent profile. Some applications for this method for holography and for optical data recording and its retrieval are discussed. Guidelines for materials' selection for this kind of application are proposed.

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Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions

Sharma

1984

Metal-Semiconductor Schottky Barrier Junctions and Their Applications

114

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Light-controlled Anodic oxidation of n-GaAs and its application to preparation of specified active layers for MESFET's

Cited by 8 publications

References 14 publications

Laser-Controlled Etching Of Chromium-Doped and N-Doped <100> Gaas

Laser-Controlled Etching Of Chromium-Doped and N-Doped <100> Gaas

A New Process for Optical Data Recording by Photoelectrochemical Etching

Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions

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