Laser-Controlled Etching Of Chromium-Doped and N-Doped <100> Gaas

Abstract

The photochemical etching of chromium-doped and n-doped <100> GaAs in HNO 3 and KOH is examined in the wavelength region of 334 to 514 nm from an argon-ion laser.The etching process is found to be not thermally controlled.The etch rates of chromium-doped GaAs agree with a diffusion-controlled model of the photochemically produced holes.For both types of GaAs, HNO 3 is found to produce morphologically superior results.