Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations

Ikoshi, Ayanori; Toki, Masahiro; Yamagiwa, Hiroto; Arisawa, Daijiro; Hikita, Masahiro; Suzuki, Kazuki; Yanagihara, Manabu; Uemoto, Yasuhiro; Tanaka, Kenichiro; Ueda, T.

doi:10.1109/irps.2018.8353594

Cited by 24 publications

(6 citation statements)

References 2 publications

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“…The classic switching test circuit is the double pulse test (DPT) [14], and it is frequently used on reliability and robustness studies. However, the present literature demonstrated that current collapse is likely to place during repeated switching events with a DPT circuit, strongly reducing the maximal duration of the test [11], [17]. Therefore, in the case of reliability tests involving GaN HEMTs the DPT circuit might not be the best option, and recent studies have proposed better adapted switching tests circuits [15], [16].…”

Section: Introductionmentioning

confidence: 88%

Application of the Double Source Switching Test to GaN HEMTs

Bade,

Alam,

Morel

et al. 2023

2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

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This paper demonstrates the advantages of the switching test circuit "double source test" (DST) on reliability and robustness tests on GaN HEMTs. This circuit performs switching tests with an auxiliary switch to shortcircuit the DUT while on stand-by, allowing to control of the duration of the drain-source static stress over the DUT. This feature can contribute to the study of the impact of hard switching events on the current collapse of GaN HEMTs independently of the static drain-source stress, when the tests reported in present literature show these effects superposed. Moreover, the DST when programmed for minimum drain-source stress considerably reduced the current collapse on p-GaN gate devices, allowing longer repetitive tests.

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Section: Introductionmentioning

confidence: 88%

Application of the Double Source Switching Test to GaN HEMTs

Bade,

Alam,

Morel

et al. 2023

2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

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“…9. 16) The device features epitaxially regrown p-GaN gate/AlGaN/GaN triple layers formed over the V-grooves at the surface of p-GaN well/n-GaN drift layers. Here, carbon-doped insulating GaN is formed on top of the p-GaN well layer to block the offstate leakage current, and the carbon-doped GaN/Mg-doped p-GaN layer is referred to as the hybrid blocking layer (HBL).…”

Section: Device Structurementioning

confidence: 99%

“…[10][11][12] The HD-GITs demonstrate superior reliability to that of conventional GITs at higher operating voltages. [13][14][15][16] After describing compact power switching systems by using GITs, further technical challenges in GaN power devices are reviewed by demonstrating new device structures. 17) The challenges include vertical GaN transistors on GaN substrates as well as metal-insulator-semiconductor (MIS)-gate GaN transistors.…”

Section: Introductionmentioning

confidence: 99%

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GaN power devices: current status and future challenges

Ueda

2019

Jpn. J. Appl. Phys.

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The status and challenges in the development of GaN power devices are reviewed. At present, normally-off gate injection transistors (GITs) on Si are commercially available. The updated structure known as a hybrid-drain-embedded GIT provides superior reliability that contributes to the stable operation of compact power switching systems with high efficiency. The fabricated vertical GaN transistor on GaN as a future challenge demonstrates extremely low specific on-state resistance and high breakdown voltage. Metal-insulator-semiconductor-gate GaN transistor is also a technical challenge for faster switching, since it would give greater freedom of gate driving as a result of both high threshold voltage and widened gate voltage swing. Normally-off operation free from hysteresis in the current–voltage characteristics is confirmed in a recessed-gate AlGaN/GaN heterojunction field effect transistor using AlON as a gate insulator. Fast switching characteristics are experimentally confirmed for both of the newly developed GaN devices, indicating their great potential for practical use.

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“…Despite the importance and effectiveness of Pulsed-IV and DCT analysis, the reliability test conditions may not be representative of the real application conditions, where devices can be subject to hard-switching transitions, when used in power conversion circuitry. For this reason, the switching reliability of GaN HEMTs is receiving a great deal of attention from the researchers [14][15][16], but is relatively unexplored in the literature. Also, a comparison between conventional (pulsed-IV and DCT) and advanced (hard switching) analytical techniques still has to be presented.…”

Section: Introductionmentioning

confidence: 99%

Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

Modolo

Santi

Minetto

et al. 2020

Semicond. Sci. Technol.

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The aim of this paper is to improve the understanding of gallium nitride (GaN) high electron mobility transistors (HEMTs) submitted to hard switching operation, with focus on the hot-electron phenomena. This is becoming a hot-topic both for the scientific community and for the industry. The analysis is carried out through a cross-comparison of three different experimental techniques: conventional Pulsed-IV characterization, a novel pulsed-drain current transient (P-DCT) method, and a custom-developed hard switching test protocol. Hard switching analysis was performed through a novel system able to test the device in hard-switching conditions with an unprecedented turn-on slew-rate of 25 V ns−1 on-wafer level. This allows μs to investigate the impact of hard switching in terms of (i) locus trajectory, (ii) dissipated power, and (iii) dynamic R on increase. Furthermore, the accumulation of switching stress is assessed by repeating the experiment with increasing frequency, from 1 kHz to 100 kHz. The extensive cross-analysis offers a novel insight on the degradation mechanisms occurring in power GaN HEMTs. The results collected within this paper allow: (1) to evaluate the dynamic behavior under both soft- and hard-switching stress, thus differentiating off-state and semi-on-state stress; (2) to pinpoint hot-electrons as the main cause of the current collapse observed in semi-on; (3) by comparing the results obtained from P-DCT and Hard Switching Analysis we demonstrate that the hot-electron trapping is a very fast process which can happen in few ns. The related trapping and de-trapping kinetics are investigated in detail. The results described within this paper provide novel insight on the important role of hot-electrons in the dynamic R on increase during hard switching operations.

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Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations

Cited by 24 publications

References 2 publications

Application of the Double Source Switching Test to GaN HEMTs

Application of the Double Source Switching Test to GaN HEMTs

GaN power devices: current status and future challenges

Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

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