GaN power devices: current status and future challenges

Abstract

The status and challenges in the development of GaN power devices are reviewed. At present, normally-off gate injection transistors (GITs) on Si are commercially available. The updated structure known as a hybrid-drain-embedded GIT provides superior reliability that contributes to the stable operation of compact power switching systems with high efficiency. The fabricated vertical GaN transistor on GaN as a future challenge demonstrates extremely low specific on-state resistance and high breakdown voltage. Metal-insulator-semiconductor-gate GaN transistor is also a technical challenge for faster switching, since it would give greater freedom of gate driving as a result of both high threshold voltage and widened gate voltage swing. Normally-off operation free from hysteresis in the current–voltage characteristics is confirmed in a recessed-gate AlGaN/GaN heterojunction field effect transistor using AlON as a gate insulator. Fast switching characteristics are experimentally confirmed for both of the newly developed GaN devices, indicating their great potential for practical use.

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

“…This is primarily because of the current and voltage limitations [ 1 , 9 , 11 ] of the lateral configuration initially adopted for design of GaN power transistors. These devices were built to capitalize on the high-mobility high-density 2DEG formed at the AlGaN/GaN hetero-interface and indeed, several works on lateral GaN transistors have displayed impressive performances in the mid-voltage range [ 12 , 13 , 14 ], as a result of revolutionary improvements in GaN epitaxy and design over the last couple of decades.…”

History of Solar Car Technology and its Future Especially in Power Electronics

“…On the other hand, advances in magnetic field analysis tools [54] and electrical system design simulation tools [55] for improving motor performance are also important. the future, with the spread of new semiconductors such as GaN [56], power converters (inverters / converters) will become more compact [57]. In particular, polyphase and multiplexing will be promoted to reduce the size and loss of peripheral circuit equipment such as coils, transformers and capacitors.…”

Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3

“…Many III-nitride-based power electronic and optoelectronic devices require high free carrier concentrations, thus the motivation for doping investigations on GaN 4 , 5 . For next-generation power devices, the newly developed vertical GaN transistors, which show great potential for high-current and high-voltage operations, demand GaN wafers with high quality and low resistance 2 , 3 , 6 , 7 . In deep ultraviolet LEDs, GaN-based carrier injection layers with doping concentrations up to 10 19 cm −3 are used 8 , 9 .…”