Lifetime comparison of IGBT modules in Grid-connected Multilevel PV inverters Considering Mission Profile

Gatla, Ranjith kumar; Chen, Wei; Zhu, Guorong; Wang, Jing V.; Kshatri, Sainadh Singh

doi:10.23919/icpe2019-ecceasia42246.2019.8797029

Cited by 12 publications

(5 citation statements)

References 9 publications

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“…Solar Irradiance and Ambient Temperature with one-minute resolution for one year from Sep'18 to Aug'19 is considered as mission profile. At India mission profile taken from [11], similarly, at Denmark it is taken from [12]. The rainflow analysis, Monto Carlo simulation are implemented for analysis.…”

Section: Reliability Assessment Methodologymentioning

confidence: 99%

Reliability Assessment of Hybrid Silicon-Silicon Carbide IGBT Implemented on an Inverter for Photo Voltaic Applications

Kshatri¹,

Sireesha²,

Rao³

et al. 2023

JNMES

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Recent Advancements in the semiconductor technology leads to the use of Silicon Carbide (SiC) materials in the design of power switches due to its wide band gap that performs superior compared to conventional Silicon material. Nevertheless, the cost of manufacturing IGBT with the SiC material is of major concern. Hence, this article proposes a hybrid Si-SiC based IGBT to improve the performance and reliability. The hybrid Si-SiC IGBT consist of Si-IGBT with SiC Feedback Diode. A test case of 600V/30A hybrid Switch (Si-IGBT (IGW30N60H3)/SiC-diode (C3D20060D)) is considered and implemented on a 3 kW PV inverter. Mission Profile oriented reliability analysis is carried out using PLECS thermal model at two different atmospheric conditions and its effectiveness is evaluated in comparison with conventional Si IGBT. Monte Carlo simulation is implemented to calculate the B 10 lifetime. The population size of 10000 with 5 % variation is considered. The improved B 10 lifetime and reliability with the proposed hybrid Si-SiC IGBT is obtained at both India and Denmark locations.

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Section: Reliability Assessment Methodologymentioning

confidence: 99%

Reliability Assessment of Hybrid Silicon-Silicon Carbide IGBT Implemented on an Inverter for Photo Voltaic Applications

Kshatri¹,

Sireesha²,

Rao³

et al. 2023

JNMES

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“…From the yearly T j , N i , T jm , and ∆T j , which are obtained using the rainflow-counting algorithm [27]. The lifetime can be calculated using Miner's rule, as shown in Equation (2).…”

Section: Reliability Analysis Of Hybrid Si/sic Module Based Pv Invertermentioning

confidence: 99%

Comparative Reliability Assessment of Hybrid Si/SiC and Conventional Si Power Module Based PV Inverter Considering Mission Profile of India and Denmark Locations

Kshatri¹,

Dhillon

Mishra

et al. 2022

Energies

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Energy harnessing from renewable energy sources has become more flexible with power electronic technologies. Recent advancements in power electronic technologies achieve converter efficiency higher than 98%. Today, reliable power electronic devices are needed to design a PV-based energy converter (inverter) to reduce the risk of failure and maintenance costs during operation. Wide-bandgap SiC devices are becoming more common in power electronic converters. These devices are designed to reduce switching loss and improve the efficiency of the system. Nevertheless, the cost of SiC devices is a major concern. Hence, to improve the reliability of the PV inverter while considering the economic aspects, this paper develops a highly reliable PV inverter with a hybrid Si/SiC power module that consists of a Si-IGBT with a SiC anti-parallel diode. A test case of a 3 kW PV inverter is considered for reliability analysis. The loading of the PV inverter is done under uncertain environmental conditions by considering the yearly Mission Profile (MP) data related to Ambient Temperature (AT) and Solar Irradiance (SI) at the India and Denmark locations. The effectiveness of the proposed hybrid Si/SiC power module is tested by comparing it with a conventional IGBT power module. The results showcase the marked improvement in PV inverter reliability with the proposed hybrid power module.

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“…The most commonly used approach for thermal stress modeling has previously been presented in Fig. 6 [15]- [19]. This model will be referred to as a transient thermal model, since it includes all transient thermal impedances in the thermal network (e.g., between the junction and case Z jc and between the case and ambient Z ca ).…”

Section: A Transient Thermal Modelmentioning

confidence: 99%

“…However, due to the requirement of long-term simulation studies, a lumped thermal network is typically applied for analyzing thermal stress under mission profile operation due to its low computational burden and simple parameterization [15]- [22]. In previous studies, the lumped thermal network is either based on the transient thermal model [15]- [19], which includes all the transient thermal impedance, or the steady-state lumped thermal model [20]- [22], which only considers the thermal resistance. While this thermal stress modeling approach has been widely accepted in the previous studies, to the best knowledge of the authors, there is still a lack of validation in terms of modeling accuracy, especially when comparing the simulation results against the experimental thermal stress in field operations.…”

Section: Introductionmentioning

confidence: 99%

Impact of Mission Profile Dynamics on Accuracy of Thermal Stress Modeling in PV Inverters

Sangwongwanich

Wang

Blaabjerg

2020

2020 IEEE Energy Conversion Congress and Exposition (ECCE)

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Thermal stress modeling of power devices is a key factor that influences the design for reliability of Photovoltaic (PV) inverters under long-term operations, i.e., different mission profiles. Due to the requirement of long-term analysis for mapping the inverter reliability more accurately, a thermal model based on a lumped thermal network is normally employed due to its low computational burden. However, there is still a lack of validation in terms of modeling accuracy, e.g., comparing the simulation results against the experimental thermal stress in field operations. Besides, the impact of mission profile dynamics on the accuracy of different thermal modeling approaches have not been analyzed. To address this issue, the model accuracy of two thermal stress modeling approaches for PV inverters are evaluated in this paper by comparing the thermal stress estimated from a thermal model with the experimental results under various mission profile dynamics. According to the results, the average error of the junction temperature estimation is 1.51 % for a transient thermal model and 2.08 % for a steady-state thermal model, respectively. On the other hand, the computational efficiency of the thermal stress modeling can be improved by more than a factor of three when using the steadystate thermal model.

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Lifetime comparison of IGBT modules in Grid-connected Multilevel PV inverters Considering Mission Profile

Cited by 12 publications

References 9 publications

Reliability Assessment of Hybrid Silicon-Silicon Carbide IGBT Implemented on an Inverter for Photo Voltaic Applications

Reliability Assessment of Hybrid Silicon-Silicon Carbide IGBT Implemented on an Inverter for Photo Voltaic Applications

Comparative Reliability Assessment of Hybrid Si/SiC and Conventional Si Power Module Based PV Inverter Considering Mission Profile of India and Denmark Locations

Impact of Mission Profile Dynamics on Accuracy of Thermal Stress Modeling in PV Inverters

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