Lifetime and capture cross-section studies of deep impurities in silicon

Schibli, E.; Milnes, A. G.

doi:10.1016/0025-5416(68)90036-0

Cited by 23 publications

(2 citation statements)

References 81 publications

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“…3), a better fit of the experimental data is obtained. In this case, = 2.4 × 10 -20 m² and = 3 × 10 -19 m², these cross section values are within the experimental range found in the literature [32][33][34][35][36] . In addition to the 3D EFEG model, a second hypothesis has been tested in this paper: the use of a gamma distribution to model the intrinsic dark current level instead of the Gaussian distribution chosen by Domengie et al.…”

Section: Application Of the 3d Electric Field Enhancement Model To Gold Contaminationsupporting

confidence: 85%

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Lemiere

Inguimbert

Nuns

2020

Journal of Applied Physics

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A new three-dimensional electric field enhanced generation model has been developed to describe the electric field effects on the thermal electron-hole pair generation rate. The originality of this model lies on the full threedimensional description of the synergetic mechanism between the Poole-Frenkel barrier lowering and the Phonon-Assisted Tunneling mechanism. To do this, a classical 1D model has been integrated over all possible directions of emission of the carriers. The 3D model has been implemented in a Monte Carlo tool devoted to the simulation of the dark current increase induced by radiations in image sensors. Our three-dimensional simulation has been compared to one-dimensional electric field effects simulations and experimental data found in the literature in the context of gold contamination. The consequence of using a three-dimensional electric field enhanced generation (EFEG) model is the reduction of the dispersive effect on the dark current distribution of the electric field: hence each dark current peak is narrower and shows higher peak's amplitude. The threedimensional model needs to slightly change the cross section parameters used for a 1D EFEG case to keep a realistic description of each dark current peak of the histogram. In the rest of the paper, we extended our work on constraints relative to space applications. The histograms of the simulated dark current taking into account one and three dimensional electric field enhancement effects have been estimated and compared to experimental data acquired after a proton irradiation at room temperature. The use of a three-dimensional model tends to give a more realistic prediction of the dark current non uniformity in an irradiated pixel array.

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Section: Application Of the 3d Electric Field Enhancement Model To Gold Contaminationsupporting

confidence: 85%

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Lemiere

Inguimbert

Nuns

2020

Journal of Applied Physics

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“…where σ o is the capture cross-section at the temperature T o corresponding to the peak position of the DLs in DLTS spectra. For different DLs in silicon, the power index m can be in the range from −4 to 0 [31]. It should be noted that only the data obtained within the temperature range allow us to determine precisely the DL parameters.…”

Section: Jinst 15 P02017mentioning

confidence: 99%

Electric field distribution in Si detectors irradiated with ⁴⁰Ar ions: experimental study and simulation

2020

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This study is concerned with the influence of defect clusters on the profiles of the electric field E and effective space charge concentration N eff in Si detectors irradiated with 1.62 GeV 40 Ar +7 ions and operating at temperatures from 292 down to 200 K. The electric field profiles reconstructed from the shapes of the detector current pulse response measured by Transient Current Technique demonstrated the double-peak electric field distribution and the inversion of space charge sign on lowering the temperature, all typical of Si detectors irradiated with protons and neutrons. To find a correlation with microscopic parameters specific to the damage induced by ions, the profiles were simulated in terms of the model of two effective deep levels of radiation-induced defects. It is shown that the reconstructed and simulated distributions are in a qualitative agreement; however, simulation required an accurate correction of the deep acceptor parameters and the use of the density of thermally generation current much higher than the experimental value. K: Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Radiation damage to detector materials (solid state); Radiation-hard detectors 1Work carried out in the framework of the CERN-RD50 collaboration. 2Corresponding author.

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Properties of copper donor levels in silicon

Lemke¹

1970

Phys. Stat. Sol. (a)

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Lifetime and capture cross-section studies of deep impurities in silicon

Cited by 23 publications

References 81 publications

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Electric field distribution in Si detectors irradiated with ⁴⁰Ar ions: experimental study and simulation

Properties of copper donor levels in silicon

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Lifetime and capture cross-section studies of deep impurities in silicon

Cited by 23 publications

References 81 publications

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Electric field distribution in Si detectors irradiated with 40Ar ions: experimental study and simulation

Properties of copper donor levels in silicon

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Electric field distribution in Si detectors irradiated with ⁴⁰Ar ions: experimental study and simulation