Properties of copper donor levels in silicon

Abstract

Trap parameters were evaluated from the time behaviour of space charge limited currents in Cu doped p‐Si. For the Cu donor level which acts as trap in p‐Si a depth EDV = 0.21 eV from the valence band and a cross section for holes S(Cu)p = 2 × 10−14 cm2 were obtained. No temperature variation of cross section could be observed in the temperature range between 78 and 120 °K.