Li(Cd,Mn)P: a new cadmium based diluted ferromagnetic semiconductor with independent spin &amp; charge doping

Han, Wei; Chen, B. J.; Gu, Bo; Zhao, Guoqiang; Yu, Shuang; Wang, X. C.; Liu, Q. Q.; Deng, Zhonghua; Li, W. M.; Zhao, Jianhua; Cao, Lipeng; Peng, Yi; Zhu, Xiaohong; Yu, Richeng; Maekawa, Sadamichi; Uemura, Y. J.; Jin, Chaoyi

doi:10.1038/s41598-019-43754-x

Cited by 11 publications

(6 citation statements)

References 35 publications

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“…在Li(Zn,Mn)As之后, 很快便有了其他"111" 型稀磁半导体的研究 , 包括 Li(Zn,Mn)P以及 Li(Cd,Mn)P等, 它们均与LiZnAs有着相同的晶体结构和相似的能带结构, 基于同样的掺杂设计, 它们也同样因过掺杂的Li而成为一种p型半导体. 对于Li(Zn,Mn)P来讲, 最高T C 为34 K, 且在低温下具有与Li(Zn,Mn)As相当的饱和磁矩和同样低的矫顽力(小于100 Oe), 但Li(Zn,Mn)P的电导率始终随温度上升而下降, 即为半导体性; 同时, Li(Zn,Mn)P也具有负磁阻, 最大超过-30% [24,25] .…”

Section: 着材料磁性是其具有的本征属性明确地证明了unclassified

Recent advances in application-oriented new generation diluted magnetic semiconductors

Peng,

Zhao,

Deng

et al. 2024

Acta Phys. Sin.

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Diluted ferromagnetic semiconductors (DMS) have attracted widespread attention for last decades, owing to the potential applications for spintronics devices. But classical III-V based DMS materials, such as (Ga, Mn) As, which depends on heterovalent (Ga3+, Mn2+) doping, results in lack of individual control of carrier and spin doping, and seriously limited chemical solubility. They are disadvantages to further improve the Curie temperatures. To overcome these difficulties, a new generation of DMS with independent spin and charge doping have been designed and synthesized. The representatives are I–II–V based Li (Zn, Mn) As and II–II–V based (Ba, K) (Zn, Mn)2As2. In these new materials, isovalent (Zn2+, Mn2+) substitution only dopes spins, while charges are independently doped by heterovalent substitution of non-magnetic elements. As a result (Ba, K) (Zn, Mn)2As2 obtains the reliable record of Curie temperature of 230 K among DMS where ferromagnetic orderings are mediated by itinerate carriers. Herein, we summarize the recent advances of the new generation DMS materials. The discovery and synthesis of several typical new generation DMS materials are introduced. Physical properties studies by using muon spin relaxation, angle-resolved photoemission spectroscopy and pair distribution function are presented. We also show physical and chemical pressure effects on the title materials. Andreev reflection junction based on single crystal and measurements of spin polarization are exhibited. In the end, we demonstrate the potential multiple-parameters heterojunctions with DMS superconductors and antiferromagnetic materails.

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Section: 着材料磁性是其具有的本征属性明确地证明了unclassified

Recent advances in application-oriented new generation diluted magnetic semiconductors

Peng,

Zhao,

Deng

et al. 2024

Acta Phys. Sin.

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“…The discovery of Li(Zn,Mn)As sparked extensive researches in this 111 type DMSs [28,[32][33][34][35][36] . Fig.…”

Section: Polycrystals Synthesis and Basic Physicial Properties 21 "11...mentioning

confidence: 99%

Advances in new generation diluted magnetic semiconductors with independent spin and charge doping

2019

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As one branch of spintronics, diluted magnetic semiconductors (DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials (Ga,Mn)As of III–V group based DMSs has been well studied for its high compatibility with the high-mobility semiconductor GaAs. But the Curie temperature in (Ga,Mn)As film is still far below room temperature because the spin & charge doping is bundled to the same element that makes the fabrication very difficult. Alternatively, the discovery of a new generation DMSs with independent spin and charge doping, such as (Ba,K)(Zn,Mn) 2As2 (briefly named BZA), attracted considerable attention due to their unique advantages in physical properties and heterojunction fabrication. In this review we focus on this series of new DMSs including (I) materials in terms of three types of new DMSs, i.e. the " 111”, " 122” and " 1111” system; (II) the physical properties of BZA; (III) single crystals & prototype device based on BZA. The prospective of new type of DMSs with independent spin and charge doping is briefly discussed.

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“…Masek et al firstly predicted that I-II-V Li(Zn,Mn)As could become a new diluted magnetic semiconductor [24] . In 2011, Deng et al successfully synthesized the samples and observed ferromagnetic ordering below the Curie temperature ~ 50 K [17] .…”

Section: -Systemmentioning

confidence: 99%

Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR

Guo

Ning

2019

J. Semicond.

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Diluted magnetic semiconductors (DMSs) that possess both properties of semiconductors and ferromagnetism, have attracted a lot of attentions due to its potential applications for spin-sensitive electronic devices. Recently, a series of bulk form DMSs isostructural to iron-based superconductors have been reported, which can be readily investigated by microscopic experimental techniques such as nuclear magnetic resonance (NMR) and muon spin rotation (μSR). The measurements have demonstrated that homogeneous ferromagnetism is achieved in these DMSs. In this review article, we summarize experimental evidences from both NMR and μSR measurements. NMR results have shown that carriers facilitate the interactions between distant Mn atoms, while μSR results indicate that these bulk form DMSs and (Ga,Mn)As share a common mechanism for the ferromagnetic exchange interactions.

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Li(Cd,Mn)P: a new cadmium based diluted ferromagnetic semiconductor with independent spin & charge doping

Cited by 11 publications

References 35 publications

Recent advances in application-oriented new generation diluted magnetic semiconductors

Recent advances in application-oriented new generation diluted magnetic semiconductors

Advances in new generation diluted magnetic semiconductors with independent spin and charge doping

Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR

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