LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

Makino, Takahiro; Kobayashi, Daisuke; Hirose, Kazuyuki; Yanagawa, Yoshimitsu; Saito, Hirobumi; Ikeda, Hirokazu; Takahashi, Daisuke; Ishii, Shigeru; Kusano, Masaki; Onoda, Shinobu; Hirao, Toshio; Ohshima, Takeshi

doi:10.1109/tns.2008.2009054

Cited by 37 publications

(16 citation statements)

References 17 publications

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“…One way to measure the SET pulse width is to simultaneously latch the output signals of each inverter in the inverter chain where an SET pulse propagates and detect a series of latches that do not have normal status [3][4][5]. Although many SET pulse measurements using such a circuit have been reported, only few of them adopted white neutron beam which is preferable to heavy ion beam since the spectrum of white beam resembles that observed at the terrestrial level.…”

Section: Introductionmentioning

confidence: 99%

Measurement of neutron-induced single event transient pulse width narrower than 100ps

Nakamura

Tanaka

Uemura

et al. 2010

2010 IEEE International Reliability Physics Symposium

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A novel SET pulse measurement circuit is proposed which can detect pulses narrower than 100ps. Alternation of SET pulses during the propagation through the chain of target cells is minimized, which is attributed to small chain length (typically 20). This circuit configuration contributes to obtaining pulse distribution similar to that observed in actual circuit in use. Distribution of SET pulse width measured by our circuit through the white neutron beam testing agrees well with that estimated by computer simulation.

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Section: Introductionmentioning

confidence: 99%

Measurement of neutron-induced single event transient pulse width narrower than 100ps

Nakamura

Tanaka

Uemura

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…The test chip was fabricated using the 0.2-m FD-SOI standard cell library [9], [10], [17]- [19]. The irradiation tests were performed at the Takasaki Ion Accelerators for Advanced Radiation Application (TIARA).…”

Section: B Experimental Setupmentioning

confidence: 99%

Experimental Verification of Scan-Architecture-Based Evaluation Technique of SET and SEU Soft-Error Rates at Each Flip-Flop in Logic VLSI Systems

Yanagawa

Kobayashi

Hirose

et al. 2009

IEEE Trans. Nucl. Sci.

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Irradiation test results demonstrate the validity of a scan FF technology for separately evaluating SET and SEU soft error rates (SERs) in logic VLSI systems. The SET and SEU soft errors mean the upset caused by latching an SET pulse that originates in combinational logic cell blocks and the upset caused by a direct ion hit to the FF, respectively. A test chip is fabricated using a 0.2-m fully-depleted silicon-on-insulator standard cell library and irradiated under an LET of 40 MeV-cm 2 mg. The SET and SEU soft error rates are successfully measured by the scan FFs on the test chip. A theoretical SET SER estimation from measured SET-pulse widths is also experimentally validated.Index Terms-Irradiation test, integrated circuit radiation effects, logic VLSI system, single event upset, single event transient, scan architecture.

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“…[2242][2243][2244][2245][2246] Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions. Silvestri, M., +, TNS Aug. 20091964-1970 Heavy [189][190][191][192][193][194][195][196] Characterizing the MTF in 3D for a Quantized SPECT Camera Having Arbitrary Trajectories. Zhou, J., +, TNS Feb. 2009 116-128 Method for Fine Magnet Shaping in Cyclotrons.…”

Section: Integrated Optoelectronicsmentioning

confidence: 99%

“…Griffoni, A., +, TNS Aug. 20092205-2212 Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions. Silvestri, M., +, TNS Aug. 20091964-1970 Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs. Zebrev, G. I., +, TNS Aug. 20092230-2236 Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOS-FETs.…”

Section: Liquid Scintillation Detectorsmentioning

confidence: 99%

2009 Index IEEE Transactions on Nuclear Science Vol. 56

2009

IEEE Trans. Nucl. Sci.

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LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

Cited by 37 publications

References 17 publications

Measurement of neutron-induced single event transient pulse width narrower than 100ps

Measurement of neutron-induced single event transient pulse width narrower than 100ps

Experimental Verification of Scan-Architecture-Based Evaluation Technique of SET and SEU Soft-Error Rates at Each Flip-Flop in Logic VLSI Systems

2009 Index IEEE Transactions on Nuclear Science Vol. 56

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