LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm)

Golovin, Alexander; Astakhova, A. P.; Kizhaev, S. S.; Il’inskaya, N. D.; Serebrennikova, O. Yu.; Yakovlev, Yu. P.

doi:10.1134/s1063785010010153

Cited by 7 publications

(4 citation statements)

References 3 publications

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“…show greater enhancement values (x10) compared with previous work 24,30 . The output power of the RCLED was measured to be 5.5 µW (external efficiency ≈ 0.024%) at 300 K rising to 45 µW at 77 K. We note that the electroluminescence of our RCLED lies entirely within the CO2 absorption band which coupled with the improved directionality provides a higher level of useful emission intensity compared with previous work 3,5,[13][14][15][16][17][18] .…”

Section: (D)mentioning

confidence: 59%

“…Various LED structures have been developed for CO2 monitoring at 4.2 µm [9][10][11][12] , including bulk heterostructures of InAsSbP/InAsSb 13 , AlInSb 14 , InAsSb 15 , as well as InSb/InAs quantum dots 16 , InAs/InAsSb quantum wells and superlattices 3,5,17,18 . These devices typically exhibit 300 K output powers of a few microwatts, with an emittance of ~1-14 mW/cm -2 , but with broadband emission spectra resulting in low available power at the target wavelength.…”

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confidence: 99%

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Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Al-Saymari

Craig

Noori

et al. 2019

Applied Physics Letters

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In this work we demonstrated a mid-infrared resonant cavity light emitting diode (RCLED) operating near 4.2 μm at room temperature, grown lattice-matched on a GaSb substrate by molecular beam epitaxy, suitable for CO2 gas detection. The device consists of a 1 -thick micro-cavity containing an InAs0.90Sb0.1 active region sandwiched between two high contrast, lattice-matched AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) mirrors. The electroluminescence emission spectra of the RCLED were measured over the temperature range from 20 to 300 K and compared with a reference LED without DBR mirrors. The RCLED exhibits a strong emission enhancement due to resonant cavity effects. At room temperature, the peak emission and the integrated peak emission were found to be increased by a factor of ~70 and ~11, respectively, while the total integrated emission enhancement was ~ x33. This is the highest resonant cavity enhancement ever reported for a mid-infrared LED operating at this wavelength. Furthermore, the RCLED also exhibits superior temperature stability ~0.35 nm/K and a significantly narrower (10x) spectral linewidth. High spectral brightness and temperature stable emission entirely within the fundamental absorption band are attractive characteristics for the development of next generation CO2 gas sensor instrumentation.

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Section: (D)mentioning

confidence: 59%

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confidence: 99%

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Al-Saymari

Craig

Noori

et al. 2019

Applied Physics Letters

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“…These superlattices have also been quite successful as the active regions in lasers [11][12][13]. But, there have been fewer reports of MIR LEDs using these structures [14][15][16]. In this work we report on InAs/InAsSb strained-layer superlattices (SLS) grown on InAs substrates.…”

Section: Introductionmentioning

confidence: 99%

InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

Keen

Lane

Kesaria

et al. 2018

J. Phys. D: Appl. Phys.

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InAs/InAsSb type-II strained-layer superlattice (SLS) and multiple quantum well (MQW) structures have been studied for their suitability in the active region of mid-infrared LEDs operating at room temperature. A series of InAs/InAs 1−x Sb x superlattices with low antimony content (x = 3.8-13.5%) were grown by MBE on InAs substrates and characterised using x-ray diffraction and photoluminescence (PL). The 4 K PL spectra of these samples exhibit the expected peak shift to longer wavelength and a reduction in intensity as the Sb content is increased. Band structure simulations highlight the effects of changing the antimony content and the layer thicknesses, to tailor the overlap of the electron and hole wavefunctions and maximise the radiative recombination rate. Analysis of the temperature dependence of the PL emission spectra enabled the extraction of quenching energies that demonstrate some suppression of Auger recombination in both the MQW and SLS structures. The MQW samples exhibit a changeover in the dominant radiative recombination process above ~100 K associated with thermal emission of holes into the InAs barriers; this behaviour was not observed in the SLS samples. These SLS structures have the potential for use as the active region in room temperature mid-infrared LEDs.

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“…2 LEDs emitting within this spectral range have previously been produced based on bulk InAsSb (Ref. 3) or AlInSb. 4 LEDs with active regions containing InAsSb/InAs quantum wells, 5 InSb quantum dots, 6 and InAs/GaSb superlattices 7 have also been investigated.…”

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confidence: 99%

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cheetham¹,

Krier²,

Marko³

et al. 2011

Applied Physics Letters

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Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes Appl. Phys. Lett. 99, 143101 (2011) Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate J. Appl. Phys. 110, 073102 (2011) Effect of organic bulk heterojunction as charge generation layer on the performance of tandem organic light-emitting diodes J. Appl. Phys. 110, 074504 (2011) Self-heating and athermal effects on the electroluminescence spectral modulation of an AlGaInP light-emitting diode J. Appl. Phys. 110, 073103 (2011) Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer Appl. Phys. Lett. 99, 131111 (2011) Additional information on Appl. Phys. Lett.

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LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm)

Cited by 7 publications

References 3 publications

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

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