Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cheetham, Kieran J.; Krier, A.; Marko, I. P.; Aldukhayel, A.; Sweeney, S. J.

doi:10.1063/1.3646910

Cited by 21 publications

(10 citation statements)

References 27 publications

(23 reference statements)

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“…Figure 7), and should also eliminate intervalence band absorption [23,79]. Similar benefits have also been observed in GaInAsSbP mid-infrared light emitting diodes [80].…”

Section: Dilute Bismide Alloys For Highly Efficient Temperature Stabsupporting

confidence: 60%

Band engineering in dilute nitride and bismide semiconductor lasers

Broderick

Usman²,

Sweeney

et al. 2012

Semicond. Sci. Technol.

157

109

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Highly mismatched semiconductor alloys such as GaN x As 1−x and GaBi x As 1−x have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spinorbit-splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to efficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.

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“…Figure 7), and should also eliminate intervalence band absorption [23,79]. Similar benefits have also been observed in GaInAsSbP mid-infrared light emitting diodes [80].…”

Section: Dilute Bismide Alloys For Highly Efficient Temperature Stabsupporting

confidence: 60%

Band engineering in dilute nitride and bismide semiconductor lasers

Broderick

Usman²,

Sweeney

et al. 2012

Semicond. Sci. Technol.

157

109

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show abstract

“…This suppresses IVBA and CHSH-type Auger transitions via the spin-orbit band since energy and momentum can no longer be conserved. This leads to improved laser performance in the mid-infrared, an effect also observed in GaInAsSbP/InAs midinfrared LEDs [20]. Achieving this in the near-infrared has proved troublesome owing to the difficulty in achieving Δ SO > E g at these larger band gaps.…”

Section: Introductionmentioning

confidence: 93%

Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications

Sweeney

Marko

Jin

et al. 2013

Bismuth-Containing Compounds

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Bismides are a new class of III-V semiconductor alloys which are gaining interest due to their many potential applications. In this chapter we show how the addition of bismuth atoms to III-V alloys gives rise to useful band structure properties, such as a large band gap bowing, making it possible to produce narrow gap (near-and mid-infrared) materials and devices on conventionally used III-V substrates such as GaAs and InP. In addition, bismuth-containing alloys can provide a large spin-orbit splitting energy which offers the potential to reduce or eliminate the important non-radiative Auger recombination and inter-valence band absorption processes which dominate the performance of near-and mid-infrared lasers and LEDs. Furthermore, we show that by adding nitrogen to the alloys, lattice-matched narrow band gap semiconductor heterostructures may be produced with the possibility of wide control of the conduction and valence offsets. Finally, we provide a discussion of the physics of devices based upon bismide alloys.

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“…This can be accomplished by alloying or straining the material, but is not always feasible if specific band-gap values are required. However, the strong dependence of the Auger coefficient on SOC opens an additional dimension in the design space, allowing for suppression of Auger recombination by eliminating the resonance between the SO splitting and the band gap [35].…”

Section: B Phonon-assisted Auger Processmentioning

confidence: 99%

Impact of phonons and spin-orbit coupling on Auger recombination in InAs

et al. 2019

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We extend the methodology for calculating Auger recombination from first principles to include spin-orbit interaction, which allows us to study materials in which the spin-orbit splitting and the band gap are of similar magnitude. We use this methodology to compute the direct and indirect Auger coefficients in InAs and related alloys. The direct process involves only Coulomb interaction, while the indirect process is mediated by phonons. We show how the spin-orbit split-off states allow for efficient direct Auger recombination, greatly enhancing the excitation rate of Auger holes due to a near resonance between the spin-orbit splitting and the band gap of the material. We find that the direct hole-hole-electron Auger recombination coefficient decays exponentially with increasing band gap, while the electron-electron-hole Auger recombination coefficient decays faster than exponentially. Additionally, we modeled the phonon-assisted process in InAs and show that the direct Auger process is dominant.

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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cited by 21 publications

References 27 publications

Band engineering in dilute nitride and bismide semiconductor lasers

Band engineering in dilute nitride and bismide semiconductor lasers

Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications

Impact of phonons and spin-orbit coupling on Auger recombination in InAs

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