2020
DOI: 10.1038/s41563-020-0795-4
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Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, selfaligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (III) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long-range and transport characteristics on par with tho… Show more

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Cited by 115 publications
(106 citation statements)
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“…
A single layer of a 2D material may be insulating (e.g., hexagonal boron nitride), semiconducting (e.g., MoS 2 ), or conducting (e.g., graphene), and thus all electrical material properties required for the construction of an electronic or optoelectronic device are available in the monolayer limit. [3][4][5][6] Stacks of such mono layers are typically bound by weak van der Waals (vdW) interlayer interactions, and vdW heterostructures have emerged as prime candidates for realizing electronic and optoelectronic functions in the smallest possible volume. The type and efficiency of the functionality that can be achieved depends critically on the electronic energy level alignment across the heterostructure, [7] and substantial charge density rearrangement upon contact can occur, depending on the electronic structure of each component.
…”
mentioning
confidence: 99%
“…
A single layer of a 2D material may be insulating (e.g., hexagonal boron nitride), semiconducting (e.g., MoS 2 ), or conducting (e.g., graphene), and thus all electrical material properties required for the construction of an electronic or optoelectronic device are available in the monolayer limit. [3][4][5][6] Stacks of such mono layers are typically bound by weak van der Waals (vdW) interlayer interactions, and vdW heterostructures have emerged as prime candidates for realizing electronic and optoelectronic functions in the smallest possible volume. The type and efficiency of the functionality that can be achieved depends critically on the electronic energy level alignment across the heterostructure, [7] and substantial charge density rearrangement upon contact can occur, depending on the electronic structure of each component.
…”
mentioning
confidence: 99%
“…Highly crystalline flakes can be produced with a controlled number of graphene layers for a fairly low production cost. [16][17][18][19] Today, the CVD-grown graphene finds applications in modern electronic devices, [20][21] flexible touch screens, [16,22] and sensors. [12,23] Despite the outstanding advancements of the last decade, significant challenges remain when considering the growth of graphene by CVD.…”
Section: Introductionmentioning
confidence: 99%
“…Against this backdrop, CVD methods became the predominant option to grow large‐area films of single‐layer graphene (SLG). Highly crystalline flakes can be produced with a controlled number of graphene layers for a fairly low production cost [16–19] . Today, the CVD‐grown graphene finds applications in modern electronic devices, [20–21] flexible touch screens, [16,22] and sensors [12,23] …”
Section: Introductionmentioning
confidence: 99%
“…Two-dimensional (2D) semiconductors have attracted enormous research interests for their great potentials as channel materials in the next-generation eld-effect transistors (FETs) with high mobility and great gate controllability at atomic thinness [1][2][3][4][5] . However, due to such a thinness, their electrical performance can be severely deteriorated by surrounding disorders, generally arising from chemical adsorbates and its neighboring dielectrics.…”
Section: Read Full License Introductionmentioning
confidence: 99%