2011
DOI: 10.1109/tvlsi.2009.2037637
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Leakage Power and Circuit Aging Cooptimization by Gate Replacement Techniques

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Cited by 51 publications
(22 citation statements)
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“…Equation (7) shows that there exists a linear relationship between ∆D g and ∆V th . In order to measure the error of Equation (7), we conduct HSPICE simulation on some basic gates with a predictive technology modeling (PTM) 65 nm model [11], e.g., an NAND and NOR gate, and the error is below 2% which can meet our requirement.…”
Section: Path-based Nbti Modelmentioning
confidence: 99%
“…Equation (7) shows that there exists a linear relationship between ∆D g and ∆V th . In order to measure the error of Equation (7), we conduct HSPICE simulation on some basic gates with a predictive technology modeling (PTM) 65 nm model [11], e.g., an NAND and NOR gate, and the error is below 2% which can meet our requirement.…”
Section: Path-based Nbti Modelmentioning
confidence: 99%
“…The technique is further combined with circuit aging in preand-post silicon phases. [13] [20]. IVC has also been explored in the presence of uncertainty [14].…”
Section: Related Workmentioning
confidence: 99%
“…The leakage of each cell in the circuit depends on the input pattern applied to the circuits. Researchers have proposed several techniques to generate the input pattern for minimum leakage current and solve the NP-hard problem [4]- [7]. An easy way to solve the problem is to use the functional dependencies in the circuits and the controllability of the nodes.…”
Section: Input Pattern Generationmentioning
confidence: 99%
“…Several techniques have been proposed to generate the minimum leakage test pattern and solve the NP-hard problem [4]- [7]. None of these techniques explicitly considers the interactions among the sub-threshold leakage, gate tunneling leakage, and BTBT leakage.…”
Section: Introductionmentioning
confidence: 99%