2022 Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition (DATE) 2022
DOI: 10.23919/date54114.2022.9774763
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Leakage Power Analysis in Different S-Box Masking Protection Schemes

Abstract: County (UMBC) ScholarWorks@UMBC digital repository on the Maryland Shared Open Access (MD-SOAR) platform.

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Cited by 7 publications
(4 citation statements)
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References 23 publications
(26 reference statements)
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“…Aging mechanisms result in performance degradation and eventual failure of digital circuits over time. In CMOS technology, the two leading factors of aging are Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) [2]. Both mechanisms result in increasing switching voltage and path delays.…”
Section: A Background On Device Agingmentioning
confidence: 99%
See 2 more Smart Citations
“…Aging mechanisms result in performance degradation and eventual failure of digital circuits over time. In CMOS technology, the two leading factors of aging are Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) [2]. Both mechanisms result in increasing switching voltage and path delays.…”
Section: A Background On Device Agingmentioning
confidence: 99%
“…Both mechanisms result in increasing switching voltage and path delays. NBTI (one class of BTI) [2] affects PMOS transistors, while PBTI (another class of BTI) as well as HCI affects NMOS devices. BTI Aging: A PMOS (NMOS) transistor goes under two phases of NBTI (PBTI) depending on its operating condition [2].…”
Section: A Background On Device Agingmentioning
confidence: 99%
See 1 more Smart Citation
“…NMOS) transistor goes under two phases of NBTI (resp. PBTI) depending on its operating condition [2]. The first phase, i.e., stress, occurs when the related transistor is "ON".…”
Section: Background On Device Agingmentioning
confidence: 99%