Leakage current characteristics of metal (Ag,TiN,W)-Hf:Ta2O5/SiO N –Si structures

Novkovski, N.; Atanassova, E.

doi:10.1016/j.mssp.2014.06.007

Cited by 3 publications

(3 citation statements)

References 19 publications

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“…The use of high permittivity dielectrics raised the interest for various metal gates [56].We have recently demonstrated that Ag gates provide particularly good electrical properties of MOS structures containing high- dielectric [57].…”

Section: Gate Materialsmentioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

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Development of materials and technologies for microelectronics is required by the needs of the constantly increasing level of integration of microelectronics circuits. Increase of the integration level compels downscaling of all the dimensions of devices, which in its turn requires very thin layers with exceptional quality due to rather high electric fields at working conditions. First, technological improvements are adopted aimed at fabrication of materials with uniform quality, geometrical flatness and extremely low density of intentionally introduced defects. Second, new fabrication methods are developed providing materials with much better quality. Third, new materials showing better properties than the standard (conventional) ones are obtained and developed further.Decreasing the dimensions of the layers changes the nature of the physical phenomena involved in the functioning of devices. Quantum mechanical mechanisms are more and more important in the description of the properties of the materials and devices on the nanoscale. The question arises where is the limit of the possibilities of the materials and technologies for nanoscale electronics.

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Section: Gate Materialsmentioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

Contributions

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show abstract

“…Even if introducing the improvements with various technological procedures such as the nitridation, the use of silicon dioxide as dielectric is limited (Novkovski and Atanassova, 2006 ) and their pseudobinary alloys are studied as a replacement of the silicon dioxide for various microelectronics applications (Wilk et al, 2001;Houssa et al, 2006;Wong and Iwai, 2006;Kittl et al, 2009). The main advantage of high-k dielectrics compared to silicon dioxide is the possibility to obtain the same capacitance with a larger physical thickness (d) of the dielectric layer and thus to reduce the leakage due to direct tunneling occurring in ultrathin SiO 2 (thinner than 2 nm).…”

Section: High-k Dielectricsmentioning

confidence: 99%

“…Even if the metal gate is not in direct contact with the interfacial layer, in the case of nanosized films, it influences strongly its thickness and properties (Novkovski and Atanassova, 2015).…”

Section: Role Of the Interfacial Layermentioning

confidence: 99%

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Novkovski

2014

Front. Mater.

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Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high-permittivity dielectrics (high-k ) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-k are discussed in this paper and directions for further development are indicated. Further progress also requires better understanding of the physical phenomena appearing in stacked high-k /interfacial layer dielectrics.

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Leakage current characteristics of metal (Ag,TiN,W)-Hf:Ta2O5/SiO N –Si structures

Cited by 3 publications

References 19 publications

Progress in Materials for Microelectronics and Further Challenges

Progress in Materials for Microelectronics and Further Challenges

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Determination of interface states in metal(Ag,TiN,W)−Hf:Ta2O5/SiO N −Si structures by different compact methods

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