Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Abstract

Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high-permittivity dielectrics (high-k ) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-k are discussed in this paper and directions for further development are indicated. Further progress also requires better understanding of the physical phenomena appearing in stacked high-k /interfacial layer dielectrics.

Progress in Materials for Microelectronics and Further Challenges

“…However, the above benefit is reduced by the lower values of band offsets related to the band gap. Roughly, as a measure of the benefit of using high- dielectric instead of SiO2, the ratio r defined with equation (1) can be used [28]:…”