Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

Saadaoui, Salah; Salem, Mohamed Mongi Ben; Fathallah, Olfa; Gassoumi, M.; Gaquière, Christophe; Maâref, H.

doi:10.1016/j.physb.2012.11.031

Cited by 18 publications

(13 citation statements)

References 25 publications

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“…We remarked that, the DLTS spectra of these samples show that the H 1 peak amplitude is higher in the case of diode, which is in good agreement with the hysteresis area in C (V) characteristics. So, it's reasonable to suggest that H 1 trap is responsible of hysteresis phenomenon appearance and leakage current, as demonstrated in our previously work [10] [11]. The H 1 is probably a threading dislocation in the Al 0.25 Ga 0.75 N/GaN heterostructure [11].…”

Section: Capacitance Dlts Measurementssupporting

confidence: 61%

“…A hysteresis phenomenon, expressed by a shift towards lower reverse bias during the return sweep, has been observed. Saadaoui et al [10] [11] have claimed that the hysteresis curve can be explained as follow: A) emission of electrons, B) total depletion of electrons, C) injection and trapping of electrons and D) accumulation of electrons.…”

Section: Methodsmentioning

confidence: 99%

“…These defects may result from surface states and threading dislocations in the AlGaN/GaN herostructures [6]- [12]. The well-known phenomena are capacitance hysteresis [7] [10] [11], high leakage current [10]- [13], Kink effect [3]- [6] and drain current collapse [3] [5] [6] [9]. In this context, as a preliminary study of parasitic effects, we had started by examining the electrical behavior on the AlGaN/GaN heterostructures by the use of a variety of electrical techniques C (V), Ig (Vg), Ids (Vds), capacitance DLTS and drain-current DLTS [6] [10] [11].…”

Section: Introductionmentioning

confidence: 99%

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Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

Saadaoui¹,

Fathallah²,

Salem³

et al. 2015

OALib

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Hysteresis phenomenon in the capacitance-voltage characteristics under reverse-biased Schottky gate has been investigated for Al0.25Ga0.75N/GaN/SiC structures having three different gate surfaces. This parasitic effect was correlated with the presence of deep levels in our samples. Indeed, we have noticed the presence of two traps named H1 and A1; their respective activation energies, which are determined using capacitance deep level transient spectroscopy (DLTS) are respectively 0.74 and 0.16 eV. The H1 hole trap was associated to extended defect in the Al0.25Ga0.75N/ GaN heterostructure such as threading dislocations and was responsible of capacitance hysteresis phenomenon. The A1 electron trap appears only in the HEMT (1), which has the smaller Schottky contact area. This trap was related to a punctual defect and attributed to free surface states in the access region between the gate and the source.

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Section: Capacitance Dlts Measurementssupporting

confidence: 61%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

Saadaoui¹,

Fathallah²,

Salem³

et al. 2015

OALib

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“…The existence of defects can result from surface states, point defects, and threading dislocations in the AlGaN/GaN material structure. Such defects lead to a high leakage current [3], kink effects [4], a current collapse [5], or capacitance hysteresis [6]. They can all significantly influence the performance and reliability of the devices.…”

Section: Introductionmentioning

confidence: 99%

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150˝C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data was achieved. The activation energy of dominant traps in the investigated structures was found to be within 0.77-0.83 eV. This nearly identical activation energy was obtained from current transients measured at a reverse bias of´6 V as well as at a forward bias of+1 V. It indicates that the dominant traps might be attributed to defects mainly associated with dislocations connected predominantly with the GaN buffer near the AlGaN/GaN interface.

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“…The first activation energy corresponds to a deep level found in the literature [10], [13]. The other is characteristic of nitrogen intersticials [14].…”

Section: A Extraction Ajgorithmsmentioning

confidence: 55%

Study of different algorithms and models for trapping effect extraction

Divay¹,

Masmoudi²,

Latry³

et al. 2016

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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GaN High Electron Mobility Transistors (HEMTs) are very promising for radiofrequency applications and especially RADAR operation due to their ability to work at high power densities. However, parasitic effects Iike traps are a common issue on this type oftechnology. They have to be properly characterized in order to be compensated. Several measurement methods exists like DLTS or DLOS, mostly consisting in a measurement of a current transient at different junction temperatures. This paper presents a comparison between different extraction algorithms for trapping signatures and the possible impact of their imprecision when extracting the activation energy on measurement data. Furthermore, a more physical model for trap extraction will be presented with its limitations.

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Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

Cited by 18 publications

References 25 publications

Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Study of different algorithms and models for trapping effect extraction

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