Leakage current analysis of diamond Schottky barrier diode

Umezawa, Hamao; Saito, Takeyasu; Tokuda, Norio; Ogura, Masahiko; Ri, Shien; Yoshikawa, Hiromichi; Shikata, Shinichi

doi:10.1063/1.2643374

Cited by 131 publications

(71 citation statements)

References 15 publications

(14 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The leakage current in blocking condition considerably larger than the current originated from thermionic emission. The avalanche current multiplication is not observed in the reverse I-V characteristics, and the leakage current is estimated as the tunneling phenomenon stemming from thermionic field emission, whose details are discussed further in references [7,8,9]. The result shows that the diode retains a sufficiently high blocking voltage for high temperatures, e.g., −160 V for 250 • C. Fig.…”

Section: Fig 2 Reverse Blocking Characteristicsmentioning

confidence: 73%

High temperature switching operation of a power diamond Schottky barrier diode

Funaki

Hirano

Umezawa

et al. 2012

IEICE Electron. Express

Self Cite

View full text Add to dashboard Cite

Abstract:Diamond is considered to be the most promising wide band gap semiconductor material for the fabrication of power switching devices with respect to the figure of merit. The authors have developed a high voltage and high current diamond Schottky barrier diode (SBD). This paper evaluates the static and dynamic electrical performance of the developed diamond SBD as a power switching device. The experimental results obtained under different operating conditions validate the fast switching, unipolar device characteristics, and high temperature operation capability of the developed diamond SBD. Keywords: diamond Schottky barrier diode, switching characteristics, diamond semiconductor Classification: Electron devices, circuits, and systems References[1] A. R. Hefner, et al., "SiC power diodes provide breakthrough performance for wide range of applications,"

show abstract

Section: Fig 2 Reverse Blocking Characteristicsmentioning

confidence: 73%

High temperature switching operation of a power diamond Schottky barrier diode

Funaki

Hirano

Umezawa

et al. 2012

IEICE Electron. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…With this structure, high performance SBD can be made as indicated above. The mechanism of the reverse leakage current has been analysed and found that it is in good agreement with the tunnelling model described by thermionic-field emission (TFE) rather than the conventionally used barrier-lowering model [8]. One of the techniques for Schottky contact formation is surface oxidization of diamond to give higher barrier height that results in low reverse leakage current [9,10], and the leakage current of diamond SBDs is observed as low as 10 (measurement limit) at 1.5 MV/cm, even at the high temperature (440K).…”

Section: Sbd Devicementioning

confidence: 75%

Recent Progress of Diamond Device toward Power Application

Shikata

Ikeda

Kumaresan

et al. 2009

MSF

Self Cite

View full text Add to dashboard Cite

Abstract. Diamond is nominated as a material candidate for future high power device due to its superior material properties and resulting very high FOM. In this paper, our recent progresses and the expected possibilities of diamond for power electronics applications are introduced as short review. Firstly for the epitaxial growth, by adopting step-flow epitaxial growth by off-angle substrate with optimized growth conditions, we have succeeded in reducing these killer defects almost six orders from 106cm-2 to almost 100cm-2 levels. For the substrate, our recently developed technology to fabricate diamond plates from bulk, 12x13mm2 size are available to use, that can avoid fabrication difficulties with small size substrate. Secondly for the device, primitive studies showed possibly for the advantage of diamond such as low reverse leakage current, high temperature and high current density operation.

show abstract

“…However, the experimentally observed breakdown of diamond-based diodes was 1-3 MV cm À1 [1,2], suggesting that numerous extrinsic factors lower the breakdown voltage. Crystalline defects of diamond are the most probable cause of increasing the leakage current and inducing the electric field breakdown.…”

Section: Introductionmentioning

confidence: 97%