Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors

Remmel, T.; Ramprasad, Rampi; Walls, James

doi:10.1109/relphy.2003.1197757

Cited by 36 publications

(10 citation statements)

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“…Similar bimodal distributions of TTF for metalinsulator-metal (MIM) capacitors with deposited Ta2O5 dielectric was observed in [8,21]. The results were explained by the presence of two failure mechanisms: thermal runaway for capacitors having low TTF, and intrinsic wear-out for capacitor failing at times that are more than two orders of magnitude greater.…”

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confidence: 64%

Degradation of leakage currents and reliability prediction for tantalum capacitors

Teverovsky

2016

2016 Annual Reliability and Maintainability Symposium (RAMS)

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Two types of failures in solid tantalum capacitors, catastrophic and parametric, and their mechanisms are described. Analysis of voltage and temperature reliability acceleration factors reported in literature shows a wide spread of results and requires more investigation.In this work, leakage currents in two types of chip tantalum capacitors were monitored during highly accelerated life testing (HALT) at different temperatures and voltages.Distributions of degradation rates were approximated using a general log-linear Weibull model and yielded voltage acceleration constants B = 9.8 ± 0.5 and 5.5. The activation energies were E a = 1.65 eV and 1.42 eV. The model allows for conservative estimations of times to failure and was validated by long-term life test data.Parametric degradation and failures are reversible and can be annealed at high temperatures. The process is attributed to migration of charged oxygen vacancies that reduce the barrier height at the MnO2/Ta2O5 interface and increase injection of electrons from the MnO2 cathode. Analysis showed that the activation energy of the vacancies' migration is ~ 1.1 eV.

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confidence: 64%

Degradation of leakage currents and reliability prediction for tantalum capacitors

Teverovsky

2016

2016 Annual Reliability and Maintainability Symposium (RAMS)

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“…One of the concerns with many such high K materials is unacceptably high levels of leakage current. While innovative process enhancements aimed at improving the quality of the dielectric and electrode-dielectric interfaces have resulted in reduced leakage current [4,5], the basic mechanisms underlying leakage under various experimental conditions are still unclear.…”

Section: Introductionmentioning

confidence: 99%

Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

Ramprasad

2003

Physica Status Solidi (b)

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A phenomenological model intended to provide a description of leakage behavior in metal-insulatormetal (MIM) capacitor devices is presented. The model is able to predict both transient and steady state leakage currents under constant voltage bias conditions (the J-t characteristics), as well as J-V characteristics for a given voltage sweep schedule. The electronic transport processes currently implemented in the model include trap assisted tunneling (TAT) of electrons from the electrode to defect or trap states in the dielectric, modified Poole-Frenkel (MPF) emission of part of the trapped electrons to the conduction band of the dielectric, and Schottky emission of Fermi level electrons directly from the electrode to the conduction band of the dielectric. The model is able to predict many of the observed features, including characteristic slopes in J-t and J-V plots, and dependences of the leakage current on dielectric thickness, temperature and the Schottky barrier height.

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“…The next generation MIM capacitors require low leakage current density, high capacitance density and improved capacitance-voltage linearity along with high conductive electrode for analog and mixed signal applications. The high capacitance density in MIM capacitors is not simply obtained by reducing thickness of SiO 2 or Si 3 N 4 , as the reduced thickness of these films increase leakage current and has reliability issues [4]. Thus, the only viable solution is replacing conventional oxides and nitrides by high-κ dielectric material in MIM capacitors.…”

Section: Introductionmentioning

confidence: 99%

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Srivastava

Mangla

Gupta

2015

IEEE Trans. Nanotechnology

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Metal-insulator-metal (MIM) capacitors withAl/HfO 2 /La 2 O 3 /Al structure were fabricated using pulse laser deposition for the first time and were further investigated for their electrical and morphological properties. The MIM capacitors for future applications in analog/mixed signal circuits need further improvement in their electrical characteristics. We have fabricated MIM capacitors having low leakage current density of ∼ 9.6 × 10 −9 A/cm 2 at −1 V and high-capacitance density ∼20.8 fF/μm 2 at 3.5 V for 100-Hz frequency. The frequency dispersion effect of these MIM capacitors is observed to be quite small. We have also obtained an improved voltage coefficient of capacitance of ∼101 ppm/V 2 at 1 MHz along with improved dielectric constant which is one of the most important parameters for next generation MIM capacitors. The physical thickness of HfO 2 /La 2 O 3 dielectric film stack is found to be 13 nm in cross-section TEM. This value of physical thickness is consistent with the low EOT ∼1.66-nm estimated using C-V curve. Morphological studies of having nanostructured film morphology with low roughness are consistent with the electrical characteristics of MIM capacitors. Further improvement in electrical properties like lower leakage current density, etc., has been obtained in post metallic annealed MIM capacitors. We have observed Schottky emission as the dominant current conduction mechanism for these MIM capacitors. Index Terms-Dielectric constant, HfO 2 , high-κ dielectric, La 2 O 3 , MIM capacitor, voltage coefficient of capacitance.1536-125X India. His current research interests include fabrication of nanomaterials using plasma methods and their characterization for optical and electrical applications. He is also working on the fabrication of high-k dielectrics using plasma methods and study their various properties for possible use in next generation metal-oxide-semiconductor and metal-insulator-metal capacitors.V. Gupta (SM'01) received the B.Sc., M.Sc., and Ph.D. degrees in physics in 1987, 1989, and 1995, from the University of Delhi, Delhi, India.In 1995, he was a Reader in Physics at Deendayal Upadhyaya College, University of Delhi. He is currently a Professor in the Department of Physics and Astrophysics, University of Delhi. He received BOYSCAST fellow and MRSI medal. His current research interests include piezoelectric, ferroelectric, multiferroics and semiconducting thin films, gas/ bio sensors, UV photon detector, electro-optic applications, surface plasmon resonance, oxide nanostructures for multifunctional applications, etc. He is also working on the fabrication of MEMs-based microheaters, microwave resonators, surface acoustic wave devices, etc., and their respective applications.

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Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors

Cited by 36 publications

References 10 publications

Degradation of leakage currents and reliability prediction for tantalum capacitors

Degradation of leakage currents and reliability prediction for tantalum capacitors

Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

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Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors

Cited by 36 publications

References 10 publications

Degradation of leakage currents and reliability prediction for tantalum capacitors

Degradation of leakage currents and reliability prediction for tantalum capacitors

Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

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Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications