Lead telluride-lead tin telluride heterojunction diode array

Wang, C.C.; Hampton, Stephen R.

doi:10.1016/0038-1101(75)90095-7

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1977

1988

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Cited by 35 publications

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“…If a substrate orientation deviates at an angle larger than 0.5° from the (100) orientation, it would not be possible to obtain a good morphology epilayer. Surface morphology of the epilayers was found to be primarily related to the substrate orientation (7,18,19). The orientation dependence of the surface free energy determines the equilibrium shape of crystals.…”

Section: Resultsmentioning

confidence: 97%

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Fabrication of Pb_1‐xSn_xTe/PbTe heterojunctions by liquid phase epitaxy

Kao

Wang

Hwang

et al. 1984

Journal of the Chinese Institute of Engineers

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Section: Resultsmentioning

confidence: 97%

“…Recent reports (6)(7)(8)(9)(10)(11)(12)(13) the lattice mismatch between them is 0.41%. The composition of metal-rich solutions is determined by the growth temperature and Sn content of the epilayers.…”

Section: Introductionmentioning

confidence: 98%

Fabrication of Pb_1‐xSn_xTe/PbTe heterojunctions by liquid phase epitaxy

Kao

Wang

Hwang

et al. 1984

Journal of the Chinese Institute of Engineers

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Structural and electrical properties of Pb1 −xSnxTe films grown by molecular beam epitaxy

Ponnuraju

Vaya

Sobhanadri

1988

Phys. Stat. Sol. (a)

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Thin epitaxial layers of Pb1−xSnxTe are grown on (100) KCl substrates by molecular beam epitaxy (MBE) using a single Knudsen source. A typical source temperature of 600 °C and substrate temperatures of 250 to 350 °C are used. Laue, X‐ray, RHEED, SEM, and Van der Pauw techniques are employed to characterize these films. Layers 4 to 5 μm thick are grown at a growth rate of 0.75 μm/h. These layers are found to be p‐type having carrier concentrations in the range of 1017 to 1018 cm−3 and mobilities of the order of 103 cm2/Vs at 110 K. The composition x in the films is found to vary with the substrate temperature and the films grown at 325 °C exhibit the same value of x as the source material.

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