1984
DOI: 10.1080/02533839.1984.9676787
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Fabrication of Pb1‐xSnxTe/PbTe heterojunctions by liquid phase epitaxy

Abstract: Pb 1-x Sn x Te epitaxial layers were successfully grown on PbTe substrates by liquid phase epitaxy (LPE) technique. The compositions and surface morphology of the epitaxial Pb 1-x Sn x Te layers were controlled in the LPE growth, and p-Pb 1-x Sn x Te/n-PbTe heterodiodes with a good junction-perfection factor were made.

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