Lead salt mid-IR photodetectors with narrow linewidth

Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors

“…There is some previous work in the field of resonant-cavity-enhanced infrared detection [5][6][7][8]. Pautrat et al [5] studied RCE structures primarily for the purpose of RCE vertical cavity surface emitting lasers (VCSELs).…”

“…al. [6,8] also fabricated RCE detectors, however they fabricated devices using a lead-chalcogenide absorber layer coupled with a lead-chalcogenide and barium fluoride spacer and dielectric stack mirror system. Arnold reports peak quantum efficiencies of 32% at a resonant wavelength of 4.4 lm [6] with a FWHM of 0.037 lm, which equates to dk k ¼ 0:008.…”

Electrochemical Atomic Layer Deposition and Characterization of CdTe and PbTe Thin Films

“…PbTe makes a good candidate material for photo-detectors in the midand far-infrared bands and mid-infrared quantum well laser diode because of high quantum efficiencies and low noise level at working temperature [2][3][4]. PbTe is also among the most efficient materials for thermoelectric power generation in the intermediate range of temperature (500-900 K) because of its high thermoelectric figure of merit (ZT), a high melting point, good chemical stability, low vapor pressure and good chemical strength [5][6][7][8]. Various vacuum deposition techniques have been used to deposit PbTe and CdTe thin films including molecular beam epitaxy (MBE) [8], magnetron sputtering [9], thermal evaporation [10] and pulsed laser deposition [11].…”

Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

“…Whole large focal plane arrays even on active Si-chips containing read-out electronics have been fabricated with this technology [3]. We already published the first results on these sensors demonstrating a single narrow line with high peak quantum efficiency [7]. With HgCdTe and GaSb RCEDs, simulations have been published [8,9], and preliminary structures have been realized with InAs [10].…”