Lead chalcogenide on silicon infrared sensors: focal plane array with 96×128 pixels on active Si-chip

Mechanical properties of new chalcogenide glasses from the GeSe2‐Sb2Se3‐PbSb2Te4 system

“…3). It is extended towards the GeSe 2 The glass transition temperature T g changes from 527 to 608 K ( Table 1). The T g (m) dependence goes through a "diluted" minimum at m≈0.3, which is most probably related to the influence of the eutectic in the binary system GeSe 2 -Sb 2 Se 3 at 40 mol % Sb 2 Se 3 [9].…”

“…One of the ways to prepare materials with such characteristics is "complication" of the glasses' structure by introduction of different by structure initial components. Data about different kinds of sensors based on PbTe can be found in the literature [1][2][3][4][5][6].…”

Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films

“…1,2 PbSe, as a typical lead salt material, has attracted considerable interest, mainly due to thermal imaging applications in the 3 lm to 5 lm atmospheric window. 3,4 One of the most important advantages of lead salt materials is that device-quality lead salt semiconductors can be grown on (111) Si substrates because the thermal mismatch strain relaxed through dislocation glides along the {100} h110i planes. 5,6 Hans Zogg has successfully demonstrated lead salt detector arrays grown on (111) Si readout integrated circuits (ROICs) and two-dimensional (2D) focal-plane array imaging.…”

Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

“…Lead-chalcogenide IR-arrays have been fabricated with cut-off wavelengths ranging from 3 to 12 lm [2]. The Si-substrate may even contain the read-out electronics: A two dimensional monolithic array with 96 · 128 pixels for the 3-5 lm range has been realized [3].…”

“…They are realized with epitaxial narrow gap lead-chalcogenide layers which are especially suited for this purpose: (1) Cut-off wavelengths between 3 lm and >15 lm are obtained by chemical tuning [2,3]. (2) Distributed Bragg reflectors (DBR) with high reflectivities are easily obtained with only a few k/4 quarter wavelengths layer pairs with alternating high (H) and low (L) refractive indices.…”