Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Zogg, H.; Arnold, Martin

doi:10.1016/j.infrared.2006.06.001

Cited by 15 publications

(4 citation statements)

References 8 publications

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“…This has encouraged researchers to explore the electrical conductivity of materials. One recent technological development involved the sensitization of devices with alloys of groups IV-VI element compounds, with photodetection [1,2] and injection laser proficiencies [3], long-wavelength imaging [4,5], diode lasers [6,7], and thermo-photovoltaic energy converters [8]. They also have great technological use in remote sensing [9], thermography [10], chemical gas sensing [11,12], gas spectroscopy, and pollution control [13,14].…”

Section: Introductionmentioning

confidence: 99%

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

et al. 2021

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This research endeavor aimed to synthesize the lead (II) diphenyldiselenophosphinate complex and its use to obtain lead selenide nanostructured depositions and further the impedance spectroscopic analysis of these obtained PbSe nanostructures, to determine their roles in the electronics industry. The aerosol-assisted chemical vapor deposition technique was used to provide lead selenide deposition by decomposition of the complex at different temperatures using the glass substrates. The obtained films were revealed to be a pure cubic phase PbSe, as confirmed by X-ray diffraction analysis. SEM and TEM micrographs demonstrated three-dimensionally grown interlocked or aggregated nanocubes of the obtained PbSe. Characteristic dielectric measurements and the impedance spectroscopy analysis at room temperature were executed to evaluate PbSe properties over the frequency range of 100 Hz–5 MHz. The dielectric constant and dielectric loss gave similar trends, along with altering frequency, which was well explained by the Koops theory and Maxwell–Wagner theory. The effective short-range translational carrier hopping gave rise to an overdue remarkable increase in ac conductivity (σac) on the frequency increase. Fitting of a complex impedance plot was carried out with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb), which proved that grains, as well as grain boundaries, are responsible for the relaxation processes. The asymmetric depressed semicircle with the center lower to the impedance real axis provided a clear explanation of non-Debye dielectric behavior.

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Section: Introductionmentioning

confidence: 99%

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

et al. 2021

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“…The sulphur compounds have a wide range of properties which attract the scientific community, predominantly in thin film technology and nanoparticle synthesis. The applications of chalcogenide materials include a variety of chalcogenide glasses, infrared sensors, solar energy conversion and window layer [1][2][3][4][5][6]. Various methods are utilized for the synthesis of binary, ternary and quaternary chalcogenides.…”

Section: Introductionmentioning

confidence: 99%

Quantum chemical studies on the structural and electronic properties of nickel sulphide and iron sulphide nanoclusters

et al. 2014

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Nanoclusters of nickel sulphide (NiS) n and iron sulphide (FeS) n for n = 3-5 are studied using B3LYP exchange correlation function with 6-31G as a basis set. The structural stability of different isomers of NiS and FeS is analysed with the optimized energy, binding energy and vibrational studies. The electronic properties of isomers are discussed in terms of HOMO-LUMO gap, ionization potential, electron affinity, and embedding energy of different clusters. Based on the calculated energy, planar ring, linear ladder and bipyramidal cube of NiS and FeS nanoclusters are found to be more stable. The increase in number of atoms in the clusters leads to increase in its stability. The dipole moment is high for planar rhombus and linear ladder structures of NiS and FeS nanoclusters. The ionization potential and electron affinity are high for planar ring structure of NiS and FeS clusters. The value of energy gap of linear ladder NiS nanocluster and cube and bipyramidal cube structures of FeS is found to be low. The binding energy for cube structure of NiS and FeS clusters is found to be high. Hexagonal ring structure of NiS and FeS clusters has low embedding energy value. The other parameters such as dipole moment and point symmetry are also discussed. The structural stability and electronic properties will provide an insight for experimentalist to tailor new materials that have potential importance in engineering applications.

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“…From these compounds, lead chalcogenides narrow band gap semiconductors and their ternary compounds have attracted much attention because of their important applications as infrared detectors, photo resistors [1], lasers, solar cells [2], optoelectronic devices, thermoelectric devices, and more recently as infrared emitters and solar control coatings [2][3][4][5][6], high efficiency fiber amplifiers [7], and thermoelectric and photovoltaic devices [8]. As a result of their narrow band gap, lead chalcogenides and their alloys can be used as sensitive detectors for mid infrared [9]. Pattanaik et al [10] stated that the compositional dependence of optical E g of Pb x In 25−x Se 75 has been interpreted in terms of Kolobov's model and variation in average band energy.…”

Section: Introductionmentioning

confidence: 99%

Influence of composition on the structure and optoelectronic properties of Pb$_{x}$In$_{25-x}$Se$_{75}$ thin films

Elmeleegi¹,

Mandouh²,

Moez³

2014

Turk J Phys

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Abstract:Pb x In 25−x Se 75 thin films with 2 compositions were prepared by thermal evaporation. The surface topography of these films was studied by transmission electron microscope. The optical reflectance and transmittance were studied in order to determine the optical parameters such as optical energy gap, refractive index, extinction coefficient, dielectric loss, and dielectric tangent loss for these films. A single oscillator theory equation was applied for these films in order to determine both dispersion energy and oscillating energy, and the ratio of free carrier concentration/effective mass (N/m*) was determined optically. It was found that change in the composition of these films affects strongly all their optical and dielectric results.

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Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Cited by 15 publications

References 8 publications

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

Quantum chemical studies on the structural and electronic properties of nickel sulphide and iron sulphide nanoclusters

Influence of composition on the structure and optoelectronic properties of Pb$_{x}$In$_{25-x}$Se$_{75}$ thin films

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