Leaching Phenomena and their Suppresion in 193 nm Immersion Lithography

Dammel, Ralph R.; Pawlowski, Georg; Romano, Andrew; Hoolihan, Frank M.; Kim, Woo-Kyu; Sakmuri, Raj; Abdallah, David J.; Padmanaban, Murirathna; Rahman, M. Dalil; McKenzie, Douglas

doi:10.2494/photopolymer.18.593

Cited by 16 publications

(18 citation statements)

References 3 publications

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“…This result can be rationalized by a mechanism for leaching through a top-coat that has also been suggested independently from this work. 9 According to this mechanism, there is no direct leaching from the resist through the topcoat, i.e. the top-coat perfectly blocks the leaching.…”

Section: Resultsmentioning

confidence: 98%

Dynamic leaching procedure on an immersion interference printer

2006

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This paper describes a method to measure the dynamic behavior of resist leaching in the time domain that is relevant for immersion lithography. The total leaching amount as a function of the contact time between water and resist is obtained and successfully fitted using previously described kinetic equations. In this way valuable information is obtained for the understanding of the contribution of resist leaching to lens contamination, CD uniformity and defectivity. The procedure is further used to study the effectiveness of various leaching mitigation strategies. Top coats prove to be a very effective method to reach the leaching specifications of the tool vendors. Also immersion dedicated resist materials meet the specifications or come very close.

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Section: Resultsmentioning

confidence: 98%

Dynamic leaching procedure on an immersion interference printer

2006

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“…This resist contains two PAGs. Compared to previous methods we reported 2 the new wafer dip method described in experimental section allows to measure leaching as low as 0.2 seconds. Leaching rate for T83645 resist is linear for short times.…”

Section: Performance Under Identical Exposure Conditions Under Dry Anmentioning

confidence: 91%

“…Measurement of leached anions were carried out at Exygen Research (3058 Research Drive State College, PA 16801, USA) using an a HP1100 interfaced to a Micromass Quattro Ultimate LC/MS/MS system as reported previously. 2 Dynamic contact angles were measured using the experimental set-up shown in figure 4. Needle (1.3 mm OD) was positioned at a highet of 0.25 mm from substrate.…”

Section: Methodsmentioning

confidence: 99%

Performance of a dry 193nm resist under wet conditions

et al. 2006

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193 nm immersion lithography is rapidly moving towards industrial application, and an increasing number of tools are being installed worldwide, all of which will require immersion-capable photoresists to be available. At the same time, existing 193 nm processes are being ramped up using dry lithography. In this situation, it would be highly advantageous to have a single 193 nm resist that can be used under both dry and wet conditions, at least in the initial stages of 45nm node process development. It has been shown by a number of studies that the dominant (meth)acrylate platform of 193 nm dry lithography is in principle capable of being ported to immersion lithography, however, it has been an open question whether a single resist formulation can be optimized for dry and wet exposures simultaneously.For such a dry/wet crossover resist to be successful, it will need to make very few compromises in terms of performance. In particular, the resist should have similar LER/LWR, acceptable process window and controlled defects under wet and dry exposure conditions. Additionally, leaching should be at or below specifications, preferably without but at very least with the use of a top protective coat. In this paper, we will present the performance of resists under wet and dry conditions and report on the feasibility of such crossover resists. Available results so far indicate that it is possible to design such resists at least for L/S applications. Detailed data on lithographic performance under wet and dry conditions will be presented for a prototype dry/wet crossover L/S resist.

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“…described in several reports to explain the photoacid generation mechanism [1,6]. However, there was no report focused on the decomposition of the anionic moiety of these chemicals to obtain F À ions for waste treatment.…”

Section: S][cf 3 So 3 ] Was Efficiently Decomposedmentioning

confidence: 95%