Layout-Based Ultrafast Short-Circuit Protection Technique for Parallel-Connected GaN HEMTs

Karakaya, Furkan; Alemdar, Öztürk Şahin; Keysan, Ozan

doi:10.1109/jestpe.2021.3052611

Cited by 12 publications

(10 citation statements)

References 21 publications

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“…Converter dimensions are 7.5 cm, 11 cm, 12.5 cm as shown in Figure 15a GaN HEMTs with their fast switching capability are subject to circuit noises caused by high dv/dt and di/dt. In order to eliminate the risk of a shoot through short circuit failure, a short circuit protection method is proposed in [15] and applied on the half-bridge boards as presented in Figure 16. The half-bridge is designed with a parallel structure to increase the current carrying capability and well-suited for the proposed converter.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, the design of a 5.4 kW bi-directional DC/DC converter with QSW ZVS is implemented with GaN-based half-bridge prototypes with short circuit protection capability as proposed in [15]. The converter utilizes two half-bridges to cancel out inductor current ripple so that output voltage ripple and capacitor equivalent series resistance (ESR) losses would be reduced [14].…”

Section: Introductionmentioning

confidence: 99%

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Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs

Karakaya¹,

Gülsuna²,

Keysan³

2021

Energies

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There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve the application range of power converter topologies with lower conduction and switching losses. These new capabilities brought by the GaN High Electron Mobility Transistors (HEMTs) inevitably changes the feasible operation ranges of power converters. This paper investigates the feasibility of Buck and Boost based bi-directional DC/DC converter which utilizes Quasi-Square-Wave (QSW) Zero Voltage Switching (ZVS) on GaN HEMTs. The proposed converter applies a high-switching frequency at high output power to maximize the power density at the cost of high current ripple with high frequency of operation which requires a design strategy for the passive components. An inductor design methodology is performed to operate at 28 APP with a switching frequency of 450 kHz. In order to minimize the high ripple current stress on the output capacitors an interleaving is performed. Finally, the proposed bi-directional converter is operated at 5.4 kW with 5.24 kW/L or 85.9 W/in3 volumetric power density with air-forced cooling. The converter performance is verified for buck and boost modes and full load efficiencies are recorded as 97.7% and 98.7%, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs

Karakaya¹,

Gülsuna²,

Keysan³

2021

Energies

Self Cite

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“…Fig. 14 shows the V DS variation with the ultrafast OCD because fast OCD methods with good reliability have been proposed recently [31], [32]-it can not only increase the soft-off time margin of conventional methods but also reduce the peak current in the short-circuit state. However, the V DS level is related to I D / t rather than to the peak current, as shown in Fig.…”

Section: B Effect Of the Msto Methodsmentioning

confidence: 99%

Multistep Soft Turn-Off Time Control to Suppress the Overvoltage of SiC MOSFETs in Short-Circuit State

et al. 2022

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Wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) FETs, have replaced silicon insulated gate bipolar transistors (Si-IGBTs) in recent years, because WBG devices can achieve fast switching frequencies and improved temperature variation reliability with better characteristics. However, this fast-switching operation can cause a substantial drain-source voltage (V DS ), which can damage the WBG switch device in the short-circuit state because the gate driver turns off the device extremely quickly, resulting in a substantial I / t owing to the large drain current. Therefore, this study presents a multi-step soft turn-off time control method capable of changing the turn-off time according to the V DS variation using one external capacitor and simple control blocks. The proposed multi-step soft turn-off method suppresses the V DS variation under the setup voltage regardless of changes in the operating conditions and device characteristics by using a simple structure. An entire control block fabricated using a 180 nm BCDMOS process achieved real-time V DS sensing with only one external capacitor to control the number of ON/OFF MOSFETs for the 9-level soft turn-off operation and suppressed the V DS voltage under 60 V with a 1200V/25A SiC MOSFET power module.INDEX TERMS Multi-step off-time control, overcurrent detection, SiC MOSFET, soft switching.

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“…The fault detection and clearance time demonstrated by these circuits are generally below 100 ns. Additional desirable features have also been presented, such as strong dv/dt noise immunity [158], applicability to the parallel-connected GaN HEMTs [160], and monolithic integration with the GaN device [162]. In addition to fast protection, other circuit approaches are also proposed, such as connecting the GaN HEMT with a Si MOSFET [163], to enhance the short-circuit capability.…”

Section: A Short Circuit Robustnessmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Layout-Based Ultrafast Short-Circuit Protection Technique for Parallel-Connected GaN HEMTs

Cited by 12 publications

References 21 publications

Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs

Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs

Multistep Soft Turn-Off Time Control to Suppress the Overvoltage of SiC MOSFETs in Short-Circuit State

Stability, Reliability, and Robustness of GaN Power Devices: A Review

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