2021
DOI: 10.3390/en14102867
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Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs

Abstract: There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve the application range of power converter topologies with lower conduction and switching losses. These new capabilities brought by the GaN High Electron Mobility Transistors (HEMTs) inevitably changes the feasible operation ranges of power converters. This paper investigates the feasibility o… Show more

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Cited by 5 publications
(3 citation statements)
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“…Fig. 6 displays two interleaved half-bridges with device paralleling, Quasi-Square-Wave (QSW) and ZVS [59]. Fig.…”
Section: B Level 2 (37 Kw Up To 22 Kw)mentioning
confidence: 99%
“…Fig. 6 displays two interleaved half-bridges with device paralleling, Quasi-Square-Wave (QSW) and ZVS [59]. Fig.…”
Section: B Level 2 (37 Kw Up To 22 Kw)mentioning
confidence: 99%
“…The pulse square wave voltage is characterised by high frequency, large rise rate (DV/DT) and short rise time [35][36][37]. The pulse square wave voltage waveform simulated using MATLAB is shown in Figure 7.…”
Section: Simulation Analysismentioning
confidence: 99%
“…GaN devices offer superior converter performance due to their ability to switch at higher frequencies than conventional Silicon (Si) devices [1][2][3][4][5][6][7]. Enhancement-mode (E-mode) GaN HEMTs are gaining popularity in switching power supplies because they are inherently normally off devices [8][9][10]. However, these devices have stringent gate driving voltage limits (-10 to 7 V) and often require additional protection circuits [11].…”
Section: Introductionmentioning
confidence: 99%