Thin Film Ferroelectric Materials and Devices 1997
DOI: 10.1007/978-1-4615-6185-9_5
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Layered Perovskite Thin Films and Memory Devices

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Cited by 16 publications
(3 citation statements)
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“…Recently, applications of BLSF such as SrBi 2 Ta 2 O 9 (SBT), SrBi 2 Nb 2 O 9 (SBN) and SrBi 2 (TaNb) 2 O 9 (SBTN) for FeRAM have attracted increasing attention because of their merits of fatigue resistance, lead-free composition and independence of the ferroelectric properties from film thickness [2,3]. The use of BLSF has not been widespread mainly because of two drawbacks: (i) high processing temperatures and, (ii) relatively low remanent polarization [4]. Efforts have been reported recently to enhance their properties by substitution of the Bi 3+ by alternative cations.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, applications of BLSF such as SrBi 2 Ta 2 O 9 (SBT), SrBi 2 Nb 2 O 9 (SBN) and SrBi 2 (TaNb) 2 O 9 (SBTN) for FeRAM have attracted increasing attention because of their merits of fatigue resistance, lead-free composition and independence of the ferroelectric properties from film thickness [2,3]. The use of BLSF has not been widespread mainly because of two drawbacks: (i) high processing temperatures and, (ii) relatively low remanent polarization [4]. Efforts have been reported recently to enhance their properties by substitution of the Bi 3+ by alternative cations.…”
Section: Introductionmentioning
confidence: 99%
“…SrBi 2 Nb 2 O 9 (SBN) possesses a reasonable spontaneous polarization and is a layered-type perovskite ferroelectric [1]. However, it suffers from relatively high processing temperature, low spontaneous polarization and high dielectric loss [2,3]. Studies have been conducted to improve the dielectric and ferroelectric properties of the SBN.…”
Section: Introductionmentioning
confidence: 99%
“…The dynamic hysteresis deals with the external field dependence of the hysteresis and associated parameters, such as hysteresis area, remnant order parameter and coercivity. This problem is now also of interest from the point of view of applications, mainly due to the fact that the high-speed memory devices in which ferroelectric and ferromagnetic thin films are involved are being developed extensively [4].…”
mentioning
confidence: 99%