Layer-plus-wire growth of copper by small incident angle deposition

Su, Jiangbin; Li, X.X.; Jiang, Meiping; Wang, H.H.

doi:10.1016/j.matlet.2012.10.113

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…After a detailed calculation like Ref. [8], we find that the average retained kinetic energy of a sputtered Cu atom in this work is 1.24 eV. Thus the average velocity v of Cu atoms near the substrate is about 1.9×10 3 m s −1 .…”

Section: Resultsmentioning

confidence: 49%

Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Zhang

Yang

et al. 2016

Sci. China Mater.

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tered Cu atoms. It thus can be imaged that the sufficient oxygen source would lead to a partial or even full oxidation of the growing Cu film. Obviously, such undesirable oxidation would influence the performance, stability and lifetime of Cu film used as interconnection in ULSIC. Moreover, the parameter-dependent oxidation of Cu during physical sputtering deposition has not been investigated systemically yet. Thus, study on the parameter-dependent oxidation of physically sputtered Cu is crucial not only to mechanism understanding but also to practical avoidance of the undesirable oxidation.On the other hand, one recent interest in material research is the fabrication of high mobility semiconductors such as graphene-like MoS 2 [5] for the application in optoelectronic devices. Among Cu-based family, Cu is a typical metal material with a low resistivity of 1.67×10 −6 Ω cm, while its oxide Cu 2 O is a representative p-type semiconductor material with a band gap of 2.17 eV and a high resistivity of 3×10 6 Ω cm. Switzer et al. [6] found that the resistivity of layered Cu/Cu 2 O film could be tuned from 3.0×10 6 to 8.1×10−5 Ω cm. In spite of this, the optical property of the layered Cu/Cu 2 O film with a metallic resistivity was not studied in Ref. [6]. Thus, it is imperative to fabricate a certain structure of Cu-based films which can exhibit both metal and semiconductor characteristics.With the above considerations, we particularly studied the parameter-dependent oxidation of physically sputtered Cu and fabricated Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based (oxide) films such as pure Cu, Cu 2 O, CuO films and Cu/ Cu 2 O, Cu 2 O/CuO composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and op-ABSTRACT In this paper, we report the parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based (oxide) films such as pure Cu, Cu2O, CuO films and Cu/Cu2O, Cu2O/CuO composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and optical testing results show that the obtained pure Cu film and Cu/Cu2O composite film both present an intriguing combination of metal and semiconductor characteristics.

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Section: Resultsmentioning

confidence: 49%

Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Zhang

Yang

et al. 2016

Sci. China Mater.

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show abstract

“…This may be because the location ① and ② of the bevel cannot be distinguished clearly. In addition, for the formation of CuO nanosheets on the bevel, it may be attributed to the accumulation of stress in the film due to the directional diffusion of Cu atoms or CuO molecules downward along the bevel surface [16].…”

Section: Resultsmentioning

confidence: 99%

Selective bias deposition of CuO thin film on unpolished Si wafer

Wang

et al. 2020

Mater. Res. Express

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In order to enhance the performances of CuO-based surface-sensitive materials and devices, one feasible scheme is depositing CuO thin films on textured Si wafers to enlarge the specific surface area. In this work, the bias deposition of CuO thin film on unpolished Si wafer was carried out in a RF balanced magnetron sputtering system. The as-achieved CuO thin film was further characterized with scanning electron microscope, powder x-ray diffractometer and ultraviolet-visible spectrophotometer. It was found that the CuO thin film shows a pyramid-textured film morphology consisting of composite structures: a loose and porous thinner film at the bottom of bevel, a dense and compact thicker film at the top of bevel and on the underside, and many nanosheets standing on the film surface. The tip charging effect and bevel influence were discussed to reveal the selective deposition mechanism of CuO thin film on the unpolished Si wafer. It was also demonstrated that the unpolished rough Si wafer surface seems more suitable for the crystallization of CuO along (002) orientation rather than (111) orientation. Meanwhile, the CuO thin film on unpolished Si wafer exhibits the strongest absorption at the wavelength of ∼554 nm and a band gap of 1.94 eV, both of which show redshift relative to those of CuO thin film on polished Si wafer.

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Bias deposition of nanoporous Cu thin films

Wang

Jiang

et al. 2013

Materials Letters

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Layer-plus-wire growth of copper by small incident angle deposition

Cited by 4 publications

References 12 publications

Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Selective bias deposition of CuO thin film on unpolished Si wafer

Bias deposition of nanoporous Cu thin films

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