Layer Hall effect in a 2D topological axion antiferromagnet

Gao, Anyuan; Liu, Yu-Fei; Hu, Chaowei; Qiu, Jian-Xiang; Tzschaschel, Christian; Ghosh, Bahniman; Ho, Sheng Yow; Bérubé, Damien; Chen, Rui; Sun, Hai-Peng; Zhang, Zhaowei; Zhang, Xinyue; Wang, Yu-Xuan; Wang, Naizhou; Huang, Zhilian; Felser, Claudia; Agarwal, Amit; Ding, Siyuan; Tien, Hung-Ju; Akey, Austin; Gardener, Jules; Singh, Bahadur; Watanabe, Kenji; Burch, Kenneth S.; Bell, David C.; Zhou, Brian B.; Gao, Weibo; Lu, Hai-Zhou; Bansil, Arun; Lin, Hsin; Chang, Tay-Rong; Fu, Liang; Ma, Qiong; Ni, Ni; Xu, Su-Yang

doi:10.1038/s41586-021-03679-w

Cited by 160 publications

(126 citation statements)

References 68 publications

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“…Further work is required to nail down the MnBi 2 Te 4 crystal synthesis recipe that yielded these excellent results. However, the C = 1 Chern insulator state in spin-aligned MnBi 2 Te 4 has been realized repeatedly by several different groups in devices with both even and odd numbers of SLs (Deng et al, 2020;Gao et al, 2021;Ge et al, 2020;Liu et al, 2020bOvchinnikov et al, 2021;Ying et al, 2022). The C = 1 Chern insulator state with R yx ≥ 0.904h/e 2 in exfoliated MnBi 2 Te 4 devices is found to survive even up to ∼45 K under high magnetic field, which is higher than T N ∼25 K (Ge et al, 2020).…”

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 97%

“…Atomically thin MnBi 2 Te 4 films can be formed either by MBE growth (Bac et al, 2021;Gong et al, 2019;Kagerer et al, 2020;Lapano et al, 2020;Rienks et al, 2019;Tai et al, 2021;Trang et al, 2021;Zhu et al, 2020b) or by manual exfoliation from bulk crystals (Deng et al, 2020;Gao et al, 2021;Ge et al, 2020;Liu et al, 2020bOvchinnikov et al, 2021;Ying et al, 2022). MBE growth of MnBi 2 Te 4 thin films have been achieved by alternate deposition of Bi 2 Te 3 and MnTe layers (Bac et al, 2021;Gong et al, 2019;Trang et al, 2021;, co-evaporation of Mn, Bi, and Te elements (Lapano et al, 2020;Rienks et al, 2019;Tai et al, 2021;Zhu et al, 2020b) and co-deposition of MnTe and Bi 2 Te 3 sources (Kagerer et al, 2020).…”

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 99%

“…Magnetic fields influence electronic structure directly, but most strongly via their impact on magnetic configurations. Both antiferromagnetic and spin-aligned Chern insulator states have been realized under high magnetic fields in exfoliated MnBi 2 Te 4 flakes [Figs.13(b),13(c),and 14] (Deng et al, 2020;Gao et al, 2021;Ge et al, 2020;Liu et al, 2020bOvchinnikov et al, 2021;Ying et al, 2022), and will be discussed in Sec.IV.C.…”

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 99%

“…More recently, Gao et al, 2021 observed that an AH effect is induced in an even SL number (N = 6) MnBi 2 Te 4 device by a gate electric field, an effect that is referred to as the layer Hall effect. They interpreted their results in terms of electric field-induced polarization and layeredlocked Berry curvatures.…”

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 99%

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Colloquium: Quantum anomalous Hall effect

Chang¹,

Liu²,

MacDonald³

2022

Preprint

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The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators -topologically non-trivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, non-trivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. The quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr-and/or V-) doped topological insulator (Bi,Sb) 2 Te 3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi 2 Te 4 , (iii) moiré materials formed from graphene, and (iv ) moiré materials formed from transition metal dichalcogenides. In this Article, we review the physical mechanisms responsible for each class of QAH insulator, highlighting both differences and commonalities, and comment on potential applications of the QAH effect.

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Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 97%

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 99%

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 99%

Section: B Mnbi2te4 Thin Filmsmentioning

confidence: 99%

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Colloquium: Quantum anomalous Hall effect

Chang¹,

Liu²,

MacDonald³

2022

Preprint

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“…We anticipate a wide range of currently available parity-violating magnets [20][21][22][23] can host bulk nonreciprocal plasmons. Of particular interest are narrow bands moiré systems which possess parity-violating magnetic states [24,25], as well as exposed surface states that allow direct access via scanning near-field techniques [26,27].…”

mentioning

confidence: 99%

Quantum plasmonic non-reciprocity in parity-violating magnets

Arora¹,

Rudner²,

Song³

2022

Preprint

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The optical response of metals is often dominated by plasmonic resonances -the collective oscillations of an interacting electron liquid. Here we unveil a new class of plasmons that arise in a wide range of parity violating magnetic metals. In these materials, broken time reversal and parity symmetries work together with electron-electron interactions to produce intrinsically non-reciprocal bulk plasmons wherein the frequencies of forward and backward moving modes are split. Strikingly, when interactions are strong we find plasmonic non-reciprocity is dominated by the quantum metric dipole that characterizes the real-space profile of Bloch electron wavepackets; in this regime, the quantum metric dipole can give rise to strongly non-reciprocal collective dynamics even when the electronic group velocity is only weakly asymmetric. We anticipate these intrinsic non-reciprocal bulk plasmons can be realized in a wide range of parity violating magnets including twisted bilayer graphene heterostructures where quantum geometric quantities can achieve large values.

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Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi₂Te₄ Thin Films

Mazza

Lapano

MeyerIII

et al. 2022

Adv Funct Materials

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Understanding the effects of the interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, a large electronic and magnetic response is reported to be induced in the intrinsic magnetic topological insulator MnBi 2 Te 4 by controlling the propagation of surface oxidation. It is shown that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, a dramatic reversal of the sign of the anomalous Hall effect is observed to be driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi 2 Te 4 on the stoichiometry of the top layers. This study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.

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Layer Hall effect in a 2D topological axion antiferromagnet

Cited by 160 publications

References 68 publications

Colloquium: Quantum anomalous Hall effect

Colloquium: Quantum anomalous Hall effect

Quantum plasmonic non-reciprocity in parity-violating magnets

Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi₂Te₄ Thin Films

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Layer Hall effect in a 2D topological axion antiferromagnet

Cited by 160 publications

References 68 publications

Colloquium: Quantum anomalous Hall effect

Colloquium: Quantum anomalous Hall effect

Quantum plasmonic non-reciprocity in parity-violating magnets

Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films

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Product

Resources

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Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi₂Te₄ Thin Films