Layer‐by‐Layer‐Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double‐Floating‐Gate Structure for Low‐Voltage Flexible Flash Memory

Abstract

COMMUNICATIONwith the fl exible substrate, and almost no device degradation has been found under bending tests.

Synergistic effect in organic field-effect transistor nonvolatile memory utilizing bimetal nanoparticles as nano-floating-gate

“…Metal nanoparticles (NPs) have been often employed as nano-floating-gate, because their size, density and assembly could be tailored to optimize the memory performance [1,12]. Besides commonly used monometal nano-floating-gate, hybrid nano-floating-gate has been utilized as well and has shown superior performance compared with the unitary counterparts [18][19][20]. It is thus meaningful to probe the superiority of bimetal nano-floating-gate in OFET nonvolatile memories.…”

Single‐Crystal C60 Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices

“…If two fl oating-gates were assembled in one device, the memory device could potentially store data at higher density in the same physical space during the non-volatile mode and also suppress leakage of the stored charge as a result of the band offset or Coulomb repulsion between the upper and lower fl oating-gates. [ 24,[34][35][36] On the other hand, memories that allow the coexistence of trapping charges in both polarities (ambipolar trapping) result in a large bi-directional threshold voltage …”

“…[ 23,37,38 ] However, optimizing the memory materials and structures to enable continuous scaling has remained a signifi cant challenge until now. In particular, the detailed mechanism and design principles for organic nonvolatile memory with a double fl oating-gate are not clear.In the work reported here, we fi rst compatibly combined the three concepts of "double fl oating-gate", [ 24,[34][35][36]39,40 ] "ambipolar charge carrier trapping", [ 23,37,38 ] and "discrete trapping sites" [ 12,13 ] to produce high-performance non-volatile chargetrapping memory based on organic FET (OFET) device structures. Such heterostructure double fl oating-gate memory devices achieved a large charge storage capacity and a high density of available independent trapping sites that enable stable operation by displaying long retention.…”

“…[ 3,5,[11][12][13] Therefore, a discrete fl oating-gate utilizing nanostructured materials rather than a conventional planar fl oating-gate can determine the size and density of charge-trapping elements in a uniform distribution for future superior high-density memory. The following possibilities have already been employed to fashion nanostructured fl oating-gate devices: [ 12,13 ] i) thermal evaporation of thin metal layers or metal islands (nanoparticles (NPs)); [ 1,[14][15][16][17][18] ii) chemisorbed or electrostatic self-assembled metal monolayers; [19][20][21][22][23][24] iii) block polymer/NP composites; [25][26][27] iv) carbon-based charge trapping materials, such as C 60 or graphene. [28][29][30][31][32][33] However, the above fl oating-gate-based memory devices generally utilize a single fl oating-gate that stores only one kind of charge (hole or electron) to signify a "1" or "0" digital state as one bit of information.…”

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

“…Up to now, the performance of three main types of OFET memory devices, namely floating‐gate OFET memories,18, 19 ferroelectric OFET memories,20, 21 and polymer electret OFET memories22, 23 has depended strongly on the types of gate dielectric layer, which has made research attention predominantly focus on developing functional gate dielectrics 24, 25. However, compared to the charge storage layer, the effect of the organic semiconductor layer on memory performance has received far less attention.…”