Lattice Mode Degeneracy in Mo<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and Other Layer Compounds

Verble, J. L.; Wieting, Terence J.

doi:10.1103/physrevlett.25.362

Cited by 369 publications

(236 citation statements)

References 3 publications

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“…Coupling of carrier with both longitudinal acoustic (LA) phonons and transverse acoustic (TA) phonons are taken into account under the deformation potential approximation. The energies of optical phonons in bulk MoS 2 are in the frequency range of 400-500 cm − 1 (50-60 meV) 19 as also measured in Fig. 1d.…”

Section: Resultssupporting

confidence: 74%

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High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

et al. 2012

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unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of processfriendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities ( > 100 cm 2 V − 1 s − 1 ), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of highresolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

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Section: Resultssupporting

confidence: 74%

“…For homopolar phonon modes, the sulphur atoms of opposite planes vibrate out of phase (A 1g mode) and the corresponding phonon energy is 19 1 1 1 1 1 1 imp LA TA op hp . The calculated mobility associated with the individual scattering mechanisms as well as the resultant mobility is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

et al. 2012

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“…14 The basic building block of 2H type MoS2 is 3 composed of two S layers and one Mo layer arranged in hexagonal lattices. 11,15 These layers are covalently bonded to one another and form a 'trilayer' (TL). Each TL is connected to neighboring TLs via weak van der Waals interactions.…”

Section: Introductionmentioning

confidence: 99%

Anomalous excitonic resonance Raman effects in few-layered MoS₂

et al. 2015

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ABSTRACT:The resonance effects on the Raman spectra from 5 to 900 cm −1 of few-layer MoS2 thin films up to 14-layers were investigated by using six excitation energies. For the main first-order Raman peaks, the intensity maximum occurs at ~2.8 eV for single layer and at ~2.5 eV for few-layer MoS2, which correspond to the band-gap energy. At the excitation energy of 1.96 eV, several anomalous behaviors are observed. Many second-order peaks are anomalously enhanced even though the main firstorder peaks are not enhanced. In the low-frequency region (<100 cm −1 ), a broad peak centered at ~38 cm −1 and its second order peak at 76 cm −1 appear for the excitation energy of 1.96 eV. These anomalous resonance effects are interpreted as being due to strong resonance with excitons or exciton-polaritons.2

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“…Theoretical calculations predicted four first-order Raman active modes for crystalline MoS 2 . 83 The E 2 g mode, an interlayer mode, with a Raman shift at 32 cm À1 is derived from the vibration of two rigid layers. The other three Raman active modes were mainly induced by the intralayer atomic vibrations.…”

Section: Electronic and Optical Structuresmentioning

confidence: 99%

Two-dimensional layered MoS₂: rational design, properties and electrochemical applications

Zhang

Liu

et al. 2016

Energy Environ. Sci.

551

331

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The layered molybdenum chalcogenide MoS 2 has attracted wide attention due to its potential electrochemical applications. Based on its unique physical and chemical properties, numerous advances have shown that nanostructured MoS 2 , with the advantages of low cost and outstanding properties, is a promising candidate for environmentally benign energy conversion and storage (ECS) devices.Nowadays, in order to lessen the reliance on fossil fuels, the production of hydrogen from water splitting has become an important issue. Hence, developing catalysts composed of earth-abundant elements that possess activities comparable to those of noble metals is of great urgency. According to DFT calculations in terms of HER free-energy diagrams, MoS 2 could be used as an effective substitute for noble metals. Meanwhile, MoS 2 with various structures has also been applied in the field of energy storage, including batteries and supercapacitors. Additionally, due to their layer-dependent electrical properties, MoS 2 -based electrochemical devices have been applied as sensors for a variety of chemicals.In this review, we summarize recent advances in the development of MoS 2 with high-performance in various electrochemical domains, and recent progress in discovering the mechanisms underlying the enhanced activity. Moreover, we summarize the critical obstacles facing MoS 2 , and discuss strategies for further improving its activity. Lastly, we offer some suggestions on the pathways toward achieving high performance competitive with noble metal counterparts, and perspectives on practical applications of MoS 2 in the future. Broader contextThe development of inexhaustible and clean energy technologies has far-reaching benefits for our society. Owing to its high anisotropy and unique crystal structure, the attractive properties of 2D molybdenum disulfide (MoS 2 ) can be utilized in a variety of energy conversion and storage (ECS) applications. Therefore, understanding how these properties can be tuned and the tunable properties can be utilized becomes increasingly important. In this review, we first summarize recent synthetic strategies toward preparation of MoS 2 with different structures, and its role in several important renewable energy technologies. We then discuss the relationship between the tuned properties and the performance of MoS 2 in different applications, emerging trends during their development, and challenges facing them, offering our perspectives on how to effectively advance the development of MoS 2 -based devices.

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Lattice Mode Degeneracy in MoS2and Other Layer Compounds

Cited by 369 publications

References 3 publications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Anomalous excitonic resonance Raman effects in few-layered MoS₂

Two-dimensional layered MoS₂: rational design, properties and electrochemical applications

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Lattice Mode Degeneracy in MoS2and Other Layer Compounds

Cited by 369 publications

References 3 publications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Anomalous excitonic resonance Raman effects in few-layered MoS2

Two-dimensional layered MoS2: rational design, properties and electrochemical applications

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Product

Resources

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Anomalous excitonic resonance Raman effects in few-layered MoS₂

Two-dimensional layered MoS₂: rational design, properties and electrochemical applications