Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growth

Kishino, Shigenobu; Ogirima, Masahiko; Kajimura, T.; Kurata, Kazuhiro

doi:10.1016/0022-0248(74)90316-9

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University Of California Berkeley California 947201

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1993

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Cited by 16 publications

(2 citation statements)

References 7 publications

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“…Preparation of samples: Table 1 shows the conditions under which samples 1 to 10 were obtained. The experiments were performed with LN(Y, 2) and LT(Y, 2) plates of optical quality. As sources of H + ions we used melts of different acidicty: stearic acid [42], NH4H2P0, [43], and a solution of LiCl in glycerine [41].…”

Section: Methodsmentioning

confidence: 99%

New Method of Double-Crystal X-Ray Diffractrometric Determination of the Strained State in Surface-Layer Structures

Fedorov¹,

Ganshin²,

Korkishko³

1993

Phys. Stat. Sol. (a)

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A new method to determine the strained state in surface‐layer structures of any crystallographic system using double‐crystal X‐ray diffractometry is proposed. The possibility to calculate all six components of the strain tensor and in general case all three components of the rotation tensor is demonstrated. The strained state in ion exchanged H:LiNbO3 and Me: LiTaO3 structures is determined.

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Section: Methodsmentioning

confidence: 99%

New Method of Double-Crystal X-Ray Diffractrometric Determination of the Strained State in Surface-Layer Structures

Fedorov¹,

Ganshin²,

Korkishko³

1993

Phys. Stat. Sol. (a)

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“…tungsten wires. A similar technique involving alternating current and KOH solution is also known (4).…”

Section: University Of California Berkeley California 94720mentioning

confidence: 99%

Correspondence between Nonradiative Dark Spots, Microplasma Emissions, and Dislocation Pits in GaP : N Light‐Emitting Diodes

Kajimura

Aiki

Umeda

1975

J. Electrochem. Soc.

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X-ray study of AlxGa1−xAs epitaxial layers

Ishida

Matsui

Kamejima

et al. 1975

Phys. Stat. Sol. (a)

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Lattice deformation and strain are studied in double‐hetero‐structure epitaxial layers of AlxGa1−xAs. The lattices of all three epitaxial layers are found to be tetragonally deformed under the stress due to lattice mismatch amounting to 108 dyn/cm2 at room temperature. The strains in the epitaxial layers are measured up to 800°C. The influence of the crystalline quality of the substrates on that of epitaxial layers is studied. It is observed that the density of dark spot defects in the epitaxial layers is always greater than the dislocation density in the substrates.

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Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growth

Cited by 16 publications

References 7 publications

New Method of Double-Crystal X-Ray Diffractrometric Determination of the Strained State in Surface-Layer Structures

New Method of Double-Crystal X-Ray Diffractrometric Determination of the Strained State in Surface-Layer Structures

Correspondence between Nonradiative Dark Spots, Microplasma Emissions, and Dislocation Pits in GaP : N Light‐Emitting Diodes

X-ray study of AlxGa1−xAs epitaxial layers

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