Lattice dilation by free electrons in heavily doped GaAs:Si

Leszczyński, M.; Bąk‐Misiuk, J.; Domagała, J. Z.; Muszalski, J.; Kaniewska, M.; Marczewski, J.

doi:10.1063/1.115181

Cited by 34 publications

(22 citation statements)

References 10 publications

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“…It can be seen that the undoped GaSb is unintentionally ptype doped, which is consistent with the results of Anayama et al [10]. When the Be cell temperature is 700 °C, the hole concentration is 7.76×10 16 cm -3 , which is almost the same value as that for undoped GaSb layer (7.43×10 16 cm -3 ), therefore, we can consider that the doping is too weak when the Be cell temperature is 700 °C.…”

Section: Resultssupporting

confidence: 81%

“…This latter is often used in the MBE growth of III-V materials. Furthermore, it is demonstrated that the presence of dopant atoms in epitaxial atoms changes its electrical and crystallographic properties [9][10][11][12]. It was shown by Sankowska et al that the lattice constant of GaSb layer grown on GaSb substrate decreases by the Be doping and unintentional As dopant.…”

Section: Introductionmentioning

confidence: 99%

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p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Benyahia¹,

Kubiszyn²,

Michalczewski³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×10 17 cm -3 . In addition, the reduction of GaSb lattice parameter with Be doping was studied.

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Section: Resultssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Benyahia¹,

Kubiszyn²,

Michalczewski³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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show abstract

“…The 1attice parameters of Semiconduction depend on the following factors: (i) concentrations of dopants or native defects which contract or expand the lattice due to the size effect, (ii) concentration of free charge which changes the lattice parameters via the deformation potential of the extremum occupied by this charge [1][2][3][4][5], (iii) internal and external stresses (for example, due to the presence of a mismatched substrate), (iv) temperature. The latter factor may induce the change of lattice parameters not only by anharmonicity of thermal vibrations, but also by a redistribution of the free charge in the conduction-or the valence-band.…”

Section: Introductionmentioning

confidence: 99%

“…In our recent papers [7][8][9] the experience gained from the studies on Si [1], GaAs [2,3] and AlGaAs [4][5][6] was applied in the explanation of some features of the microstructure of GaN single crystals and epitaxial layers. This material attracts a considerable interest because of the present and future applications in blue-range optoelectronics and high-temperature electronics.…”

Section: Introductionmentioning

confidence: 99%

Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers

et al. 1996

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Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.

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“…The effects is roughly the same as the lattice expansion by the presence of the free carriers [8][9][10][11]. For n-type of semiconductors the effects is described by the formula where D is the deformation potential, B is the bulk modulus and n is the concentration of electrons.…”

Section: T I O N I S T H E R a T I O O F C O N C E N T R A T I O N O mentioning

confidence: 82%

Photostriction of CdF₂:In Crystals

et al. 1997

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Lattice relaxation accompanying phototransformation of In bistable centers from the ground, deep state to the shallow state in CdF2 crystal has been measured with the use of scanning tunnelling microscope. It is shown that relatively small macroscopic changes of the crystal length in the order of 1.8 x 10 -6 accompany the phototransformation of In ions. Lattice expansion upon the influence of population of shallow donor levels in CdF2 explains the observed small changes of lattice constant during the process.PACS numbers: 61.16.Ch, 61.72.Hh, 74.62.DhThe nature of lattice relaxation related to bistability of dopant centers in semiconductors has attracted a lot of attention for many years [1,2]. In impurity in CdF2 crystals was among the first characterized bistable centers in semiconductors. Its ground state is localized with a thermal ionization energy about six times smaller than the optical ionization energy (about 2 eV) [3,4]. The hydrogenic effective mass bound state of the In impurity (about 110 meV deep) is separated by a large vibronic barrier from the ground state. Photoionization of the two impurity states occurs in different spectral regions. At room temperature two strongly asymmetric bands are seen. The absorption band in the visible range (VIS) is caused by the photoionization of the localized In ground state, while the infrared (IR) band, peaked at λ 8 μm, is due to photoionization of a hydrogenic, extended state of the impurity. At low temperatures the IR band disappears, unless the crystal is first illuminated by light resonant with the VIS photoionization band. Such illumination causes metastable bleaching of the VIS absorption and simultaneous appearance of the IR band. The localized ground state is only a fraction of an eV thermally deeper than the hydrogenic state, but it exhibits an enormous 2 eV, Stokes shift [3,4]. The shift is caused by large lattice relaxation (LLR) around the impurity during photoionization. It has been postulated that the LLR in In impurity is caused by the local lattice collapse upon the photoionization of the localized In2+ deep state. This intuitive model has been recently supported by theoretical studies of In and Ga impurities in CdF2 [5]. The photoinduced local lattice collapse should affect the macroscopic dimensions of the crystal and detection of such changes may provide a direct proof of the existence of the LLR in CdF 2 :Ιn and (1005)

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Lattice dilation by free electrons in heavily doped GaAs:Si

Cited by 34 publications

References 10 publications

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers

Photostriction of CdF₂:In Crystals

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Lattice dilation by free electrons in heavily doped GaAs:Si

Cited by 34 publications

References 10 publications

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers

Photostriction of CdF2:In Crystals

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Photostriction of CdF₂:In Crystals