Lattice defects in ion implanted GaAs

Pashov, N.; Vitali, G.; Kalitzova, M.; Rossi, M.

doi:10.1002/pssa.2211500121

Cited by 2 publications

(2 citation statements)

References 16 publications

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“…Five regions are marked and distinguished, representing the two typical substance area types of Bi 2 Se 3 and GaSe. GaAs is also distinguished at the border area between different materials, showing a lattice spacing of 0.199 nm, representing the (220) plane . Lattice stripe arrangement orientations in different partitions can be seen in Figure S6; besides, As 2 Se 3 is also distinguished in Figure S7.…”

Section: Resultsmentioning

confidence: 95%

“…GaAs is also distinguished at the border area between different materials, showing a lattice spacing of 0.199 nm, representing the (220) plane. 44 Lattice stripe arrangement orientations in different partitions can be seen in Figure S6; besides, As 2 Se 3 is also distinguished in Figure S7. Therefore, the BGSA CSL structure of the NWs was confirmed.…”

Section: ■ Results and Discussionmentioning

confidence: 97%

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Self-Assembled BiGaSeAs Composite Superlattice-Structured Nanowire for Broad-Band Photodetection

Zeng,

Wang,

Cao

et al. 2024

ACS Appl. Mater. Interfaces

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Photodetectors with a broad-band response range are widely used in many fields and are regarded as pivotal components of the modern miniaturized electronics industry. However, commercial broad-band photodetectors composed of traditional bulk semiconductor materials are still limited by complex preparation techniques, high costs, and a lack of mechanical strength and flexibility, which are difficult to satisfy the increasing demand for flexible and wearable optoelectronics. Therefore, researchers have been devoted to finding new strategies to obtain flexible, stable, and high-performance broad-band photodetectors. In this work, a novel self-assembled BiGaSeAs composite superlattice-structured nanowire was developed with a simple chemical vapor deposition method for easy fabrication. After the device assembling, the photodetector showed outstanding performance in terms of obvious I on /I off (13.9), broad-band photoresponse (365−940 nm), excellent responsivity (1007.67 A/W), high detectivity (9.38 × 10 9 Jones), and rapid response (21 and 23 ms). The formation of microheterojunctions among various materials inside the nanowires also contributed to their extended broad-spectrum response and outstanding detection ability. These results indicate that the BiGaSeAs nanowires have potential applications in the field of flexible and wearable electronics.

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Section: Resultsmentioning

confidence: 95%

Section: ■ Results and Discussionmentioning

confidence: 97%