1995
DOI: 10.1002/pssa.2211500121
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Lattice defects in ion implanted GaAs

Abstract: High‐resolution transmission electron microscopy and digital filtering (by Bragg filters) are used to study the atomic structure of the damage arising in the isolated displacement cascades of Zn+ implanted GaAs. Data concerning the clustering of point defects (vacancies and self‐interstitials) in small dislocation loops, at concentration of the order of 1013 cm−2, are reported. Effects of low‐power pulsed laser annealing (LPPLA) and some analogies in the behaviour of point defects in GaAs and f.c.c. metals lik… Show more

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Cited by 2 publications
(2 citation statements)
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“…Five regions are marked and distinguished, representing the two typical substance area types of Bi 2 Se 3 and GaSe. GaAs is also distinguished at the border area between different materials, showing a lattice spacing of 0.199 nm, representing the (220) plane . Lattice stripe arrangement orientations in different partitions can be seen in Figure S6; besides, As 2 Se 3 is also distinguished in Figure S7.…”
Section: Resultsmentioning
confidence: 95%
See 1 more Smart Citation
“…Five regions are marked and distinguished, representing the two typical substance area types of Bi 2 Se 3 and GaSe. GaAs is also distinguished at the border area between different materials, showing a lattice spacing of 0.199 nm, representing the (220) plane . Lattice stripe arrangement orientations in different partitions can be seen in Figure S6; besides, As 2 Se 3 is also distinguished in Figure S7.…”
Section: Resultsmentioning
confidence: 95%
“…GaAs is also distinguished at the border area between different materials, showing a lattice spacing of 0.199 nm, representing the (220) plane. 44 Lattice stripe arrangement orientations in different partitions can be seen in Figure S6; besides, As 2 Se 3 is also distinguished in Figure S7. Therefore, the BGSA CSL structure of the NWs was confirmed.…”
Section: ■ Results and Discussionmentioning
confidence: 97%