Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

Warner, Jeffrey H.; Inguimbert, C.; Twigg, M. E.; Messenger, S.; Walters, Robert J.; Romero, Manuel J.; Summers, G.P.

doi:10.1109/tns.2008.2006266

Cited by 11 publications

(2 citation statements)

References 39 publications

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“…BCA calculations do not have a mechanism to predict amorphization, but MD simulations can predict amorphous zones. The production of amorphous zones has been observed experimentally as a result of irradiation by protons and other ions [35][36][37][38][39]. The production of amorphous zones has also been seen previously in molecular dynamics simulations.…”

Section: Amorphous Zone Productionsupporting

confidence: 71%

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

Foiles¹

2011

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The predictions of binary collision approximation (BCA) and molecular dynamics (MD) simulations of displacement cascades in GaAs are compared. There are three issues addressed in this work. The first is the optimal choice of the effective displacement threshold to use in the BCA calculations to obtain the best agreement with MD results. Second, the spatial correlations of point defects are compared. This is related to the level of clustering that occurs for different types of radiation. Finally, the size and structure of amorphous zones seen in the MD simulations is summarized. BCA simulations are not able to predict the formation of amorphous material.4

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Section: Amorphous Zone Productionsupporting

confidence: 71%

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

Foiles¹

2011

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“…1, Fig. 14) [2,68]. It has been shown that higher energy protons (E ≥ 10 MeV) could introduce very active recombination centers that are electrically and structurally different than those produced by lower energy protons.…”

Section: Discussionmentioning

confidence: 99%

Statistical spread on the displacement damage degradation of irradiated semiconductors

Inguimbert¹,

Durand²,

Nuns³

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

Maximenko

Lumb

Hoheisel

et al. 2015

Journal of Applied Physics

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Solar cells utilizing multi-quantum well (MQW) structures are considered promising candidate materials for space applications. An open question is how well these structures can resist the impact of particle irradiation. The aim of this work is to provide feedback about the radiation response of In0.01Ga0.99As solar cells grown on Ge with MQWs incorporated within the i-region of the device. In particular, the local electronic transport properties of the MQW i-regions of solar cells subjected to electron and proton irradiation were evaluated experimentally using the electron beam induced current (EBIC) technique. The change in carrier collection distribution across the MQW i-region was analyzed using a 2D EBIC diffusion model in conjunction with numerical modeling of the electrical field distribution. Both experimental and simulated findings show carrier removal and type conversion from n- to p-type in MQW i-region at a displacement damage dose as low as ∼6.06–9.88 × 109 MeV/g. This leads to a redistribution of the electric field and significant degradation in charge carrier collection.

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Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

Cited by 11 publications

References 39 publications

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

Statistical spread on the displacement damage degradation of irradiated semiconductors

Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

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