Lattice constants of Cd1−xZnxTe mixed compound semiconductor

Hirata, K.; Oda, Osamu

doi:10.1016/0167-577x(86)90088-1

Search citation statements

Order By: Relevance

Paper Sections

Select...

Orientation Relationship and Twin Configurations1

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1988

2009

Publication Types

Select...

Article7

Relationship

Self Cite0

Independent7

Authors

Journals

Cited by 12 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High temperature paraelectric CZT is a cubic phase with a = 0.646 nm and space group F-−43 m [19]. It has a zinc-blende structure in which each atom is tetrahedrally bonded to the nearest other atomic species.…”

Section: Orientation Relationship and Twin Configurationsmentioning

confidence: 99%

HREM studies of twins in Cd1−xZnxTe (x≈0.04) thin films grown by molecular beam epitaxy

He¹,

Stolitchnov²,

Setter³

et al. 2009

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Orientation Relationship and Twin Configurationsmentioning

confidence: 99%

HREM studies of twins in Cd1−xZnxTe (x≈0.04) thin films grown by molecular beam epitaxy

He¹,

Stolitchnov²,

Setter³

et al. 2009

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Cd 1−x Zn x Te (CZTx) is now a leading material for epitaxial growth [1][2][3]. For instance it can be matched to HgCdTe for low x-values [4]. These solid solutions can be used in high-energy photon detectors [5] and also for bulk photorefractive devices when they are semi-insulating [6].…”

Section: Introductionmentioning

confidence: 99%

The dielectric function and interband transitions in

Castaing

Granger

Benhlal

et al. 1996

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Ellipsometric measurements of the dielectric functions of solid solutions are given for the first time for the whole composition range at room temperature (293 K) between 0.75 eV and 5.7 eV. The energy and the broadening parameters for each critical transition are given as functions of the composition. The upward bowing of the energies is compared to theoretical estimates. The spin - orbit splittings in the valence band show a negligible bowing. Alloying leads to a small broadening which is negligible for the fundamental gap.

show abstract

Fast growth of Cd1−xZnxTe single crystals by physical vapor transport

Wiedemeier

1993

Journal of Elec Materi

View full text Add to dashboard Cite

Lattice constants of Cd1−xZnxTe mixed compound semiconductor

Cited by 12 publications

References 6 publications

HREM studies of twins in Cd1−xZnxTe (x≈0.04) thin films grown by molecular beam epitaxy

HREM studies of twins in Cd1−xZnxTe (x≈0.04) thin films grown by molecular beam epitaxy

The dielectric function and interband transitions in

Fast growth of Cd1−xZnxTe single crystals by physical vapor transport

Contact Info

Product

Resources

About